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SUM90N03-2M2P-E3

P1-P3P4-P6P7-P8
www.vishay.com
4
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
Vishay Siliconix
SUM90N03-2m2P
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
R
DS(on)
vs. V
GS
vs. Temperature
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V, I
D
= 32 A
T
J
- Junction Temperature (°C)
R
DS(on)
-
e
c
na
t
si
seR-nO
)
dez
i
lam
ro
N
(
V
GS
= 4.5 V, I
D
= 29.8 A
0.000
0.001
0.002
0.003
0.004
02468 10
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- e (Ω)cnatsiseR-nO
I
D
= 32 A
T
A
= 125 °C
T
A
= 25 °C
Forward Diode Voltage vs. Temperature
Threshold Voltage
)A( tnerruC ecruoS -I
S
V
SD
- Source-to-Drain Voltage (V)
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
T
J
= 25 °C
T
J
= 150 °C
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
)V(V
)ht(SG
T
J
- Temperature (°C)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
*V
GS
minimum V
GS
at which r
DS(on)
is specified
1000
10
0.1 1 10 100
0.1
100
1
10 ms
T
A
= 25 °C
Single Pulse
100 ms
1 s
100 µs
1 ms
DC
Limited by r
DS(on)
*
0.01
0.001
10 s
BVDSS Limited
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
www.vishay.com
5
Vishay Siliconix
SUM90N03-2m2P
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74342
Current Derating*
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Package Limited
Power Derating
C
- Case Temperature (°C)
)W( noitapissiD rewoP
T
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
1
0.1
0.01
10
-
4
10
-
3
10
-
2
10
-
1
1
Normalized Effective Transient
Thermal Impedance
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
Package Information
www.vishay.com
Vishay Siliconix
Revison: 30-Sep-13
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D
2
PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1
D4
A
A
e
b2
b
E
A
c2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010
M
A
M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c*
Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1
Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
P1-P3P4-P6P7-P8

SUM90N03-2M2P-E3

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Buy SUM90N03-2M2P-E3
Manufacturer:
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Description:
MOSFET 30V 90A 250W
Lifecycle:
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