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VSMS3700-GS08

P1-P3P4-P6P7-P7
VSMS3700
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
1
Document Number: 81373
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
VSMS3700 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm):
3.5 x 2.8 x 1.75
• Peak wavelength: λ
p
= 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si
photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared source in tactile keyboards
• IR diode in low space applications
• PCB mounted infrared sensors
• Emitter in miniature photo-interrupters
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
948553
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
P
(nm) t
r
(ns)
VSMS3700 4.5 ± 60 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
VSMS3700
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
2
Document Number: 81373
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1.5 A
Power dissipation P
V
170 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature Acc. figure 11, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21341
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21342
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.3 1.7 V
I
F
= 1 A, t
p
= 100 μs V
F
1.8 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
-1.3 mV/K
Reverse current V
R
= 5 V I
R
100 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
30 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
1.6 4.5 8 mW/sr
I
F
= 1.5 A, t
p
= 100 μs I
e
35 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
15 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
-0.8 %/K
Angle of half intensity ϕ ± 60 deg
Peak wavelength I
F
= 100 mA λ
p
950 nm
Spectral bandwidth I
F
= 100 mA Δλ 50 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time
I
F
= 20 mA t
r
800 ns
I
F
= 1 A t
r
400 ns
Fall time
I
F
= 20 mA t
f
800 ns
I
F
= 1 A t
f
400 ns
Virtual source diameter EN 60825-1 d 0.5 mm
VSMS3700
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
3
Document Number: 81373
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
0.01 0.1 1 10
1
10
100
1000
10 000
t
p
- Pulse Length (ms)
100
95 9985
I
F
- Forward Current (mA)
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
< 60 °C
94 7996
10
1
10
0
10
2
10
3
10
4
10
-1
I - Forward Current (mA)
F
43210
V
F
- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V
F rel
- Relative Forward Voltage (V)
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
I
F
- Forward Current (mA)
94 7956
10
3
10
1
10
2
10
4
10
0
0.1
1
10
100
I
e
- Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
I
F
- Forward Current (mA)
94 8012
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
P1-P3P4-P6P7-P7

VSMS3700-GS08

Mfr. #:
Buy VSMS3700-GS08
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 60 Degree 170mW 950nm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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