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MBRAF360T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 3
1 Publication Order Number:
MBRAF360/D
MBRAF360T3G,
NRVBAF360T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Device Package Shipping
†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
60 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRAF360T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAH = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
NRVBAF360T3G SMA−FL
(Pb−Free)
5000 / Tape & Ree
l
RAH
AYWWG
MBRAF360T3G, NRVBAF360T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current I
F(AV)
3.0 @ T
L
= 100°C
4.0 @ T
L
= 80°C
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 125°C
I
FRM
6
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
125
A
Storage Temperature Range T
stg
− 65 to +150 °C
Operating Junction Temperature (Note 1) T
J
− 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
R
q
JL
25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
90 °C/W
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 3.0 A, T
J
= 25°C)
V
F
0.63
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 100°C)
i
R
0.03
3.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= −40°C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
T
J
= −40°C
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8
T
J
= 175°C
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 175°C
MBRAF360T3G, NRVBAF360T3G
www.onsemi.com
3
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
R
, INSTANTANEOUS REVERSE
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE
CURRENT (A)
T
J
= 25°C
T
J
= 150°C
T
J
= 100°C
1.0E−07
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
0 102030405060
T
J
= 175°C
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
0 102030405060
T
J
= 175°C
Figure 5. Typical Capacitance
1000
10
600102030
V
R
, REVERSE VOLTAGE (V)
100
40 50 70
C, CAPACITANCE (pF)
T
J
= 25°C
P1-P3P4-P5

MBRAF360T3G

Mfr. #:
Buy MBRAF360T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3 A, 60 V SCHOTTKY RECTIF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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