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PD55025

P1-P3P4-P6P7-P9P10-P12P13-P13
1/13March, 21 2003
PD55025
PD55025S
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
OUT
= 25 W with 14.5 dB gain @ 500 MHz /
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55025 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55025 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55025’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55025
BRANDING
PD55025
PowerSO-10RF
(straight lead)
ORDER CODE
PD55025S
BRANDING
PD55025S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 40 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 7 A
P
DISS
Power Dissipation (@ Tc = 70°C) 79 W
Tj Max. Operating Junction Temperature 165 °C
T
STG
Storage Temperature -65 to +150 °C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance 1.2 °C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
PD55025 - PD55025S
2/13
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
I
DSS
V
GS
= 0 V V
DS
= 28 V
1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V
1 µA
V
GS(Q)
V
DS
= 28 V
I
D
= 100 mA
2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 3 A
0.7 0.8 V
G
FS
V
DS
= 10 V I
D
= 3 A
2.5 mho
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
86 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
76 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
5.8 pF
Symbol Test Conditions Min. Typ. Max. Unit
P
out
V
DD
= 12.5 V I
DQ
= 200 mA f = 500 MHz
25 W
G
P
V
DD
= 12.5 V I
DQ
= 200 mA P
OUT
= 25 W f = 500 MHz
14.5 dB
η
D
V
DD
= 12.5 V I
DQ
= 200 mA P
OUT
= 25 W f = 500 MHz
50 %
Load
mismatch
V
DD
= 12.5 V I
DQ
= 200 mA P
OUT
= 25 W f = 500 MHz
ALL PHASE ANGLES
20:1 VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
PD55025S
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
175 3.20 - j 4.41 1.56 + j 2.14
480 1.01 - j 1.67 1.06 + j 0.22
500 0.93 - j 1.53 1.12 + j 0.20
520 0.88 - j 1.98 1.07 + j 0.83
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
IMPEDANCE DATA
Obsolete Product(s) - Obsolete Product(s)
3/13
PD55025 - PD55025S
TYPICAL PERFORMANCE
(PD55025S)
Capacitance vs. Supply Voltage
1
10
100
1000
0 4 8 1216202428
Vds (V)
C (pF)
f = 1 MHz
Crss
Coss
Ciss
Drain Current vs Gate-Source Voltage
0
1
2
3
4
5
6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Vgs (V)
Id (A)
Vds = 10 V
Gate-Source Voltage vs Case Temperature
0.94
0.96
0.98
1.00
1.02
1.04
-25 0 25 50 75 100
Vgs (V)
Id (A)
Vds = 10 V
Id = .5 A
Id = 1 A
Id = 2 A
Id = 3 A
Id = 4 A
Id = 5 A
Output Power vs Input Power
0
5
10
15
20
25
30
35
40
45
0.00 1.00 2.00 3.00 4.00 5.00 6.00
Pin (W)
Pout (W)
Vdd = 12.5 V
Id
q
= 200 mA
520 MHz
500 MHz
480 MHz
Output Power vs Input Power
0
5
10
15
20
25
30
35
40
45
0123456
Pin (W)
Pout (W)
f = 520 MHz
Idq = 200 mA
Vdd = 12.5 V
Vdd = 13.8 V
Power Gain vs Output Power
0
2
4
6
8
10
12
14
16
18
0 1020304050
Pout (W)
Gp (dB)
Vdd = 12.5 V
Idq = 200 mA
520 MHz
500 MHz
480 MHz
P1-P3P4-P6P7-P9P10-P12P13-P13

PD55025

Mfr. #:
Buy PD55025
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch 40 Volt 7.0 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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