SI4501ADY-T1-E3 Datasheet SI4501ADY-T1-E3, SI4501ADY-T1-GE3 | P1-P3

Vishay Siliconix

Si4501ADY

Document Number: 71922

S09-0868-Rev. D, 18-May-09

www.vishay.com

1

Complementary (N- and P-Channel) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Level Shift

• Load Switch

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

N-Channel 30

0.018 at V

GS

= 10 V

8.8

0.027 at V

GS

= 4.5 V

7.0

P-Channel - 8

0.042 at V

GS

= - 4.5 V

- 5.7

0.060 at V

GS

= - 2.5 V

- 4.8

S

1

D

G

1

D

S

2

D

G

2

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free)

Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

2

G

2

G

1

S

1

D

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol

N-Channel P-Channel

Unit 10 s Steady State 10 s Steady State

Drain-Source Voltage

V

DS

30 - 8

V

Gate-Source Voltage

V

GS

± 20 ± 8

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

8.8 6.3 - 5.7 - 4.1

A

T

A

= 70 °C

7 5.2 - 4.5 - 3.3

Pulsed Drain Current

I

DM

30 - 30

Continuous Source Current (Diode Conduction)

a, b

I

S

1.8 1.0 - 1.8 - 1.0

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

2.5 1.3 2.5 1.3

W

T

A

= 70 °C

1.6 0.84 1.6 0.84

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

40 50 42 50

°C/W

Steady State 75 95 76 95

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

18 23 21 26

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Document Number: 71922

S09-0868-Rev. D, 18-May-09

Vishay Siliconix

Si4501ADY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Typ.

a

Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 0.8 1.8

V

DS

= V

GS

, I

D

= - 250 µA

P-Ch - 0.45 - 1.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

N-Ch ± 100

nA

V

DS

= 0 V, V

GS

= ± 8 V

P-Ch ± 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

N-Ch 1

µA

V

DS

= - 8 V, V

GS

= 0 V

P-Ch - 1

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

N-Ch 5

V

DS

= - 8 V, V

GS

= 0 V, T

J

= 55 °C

P-Ch - 5

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

N-Ch 30

A

V

DS

= - 5 V, V

GS

= - 4.5 V

P-Ch - 20

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 8.8 A

N-Ch 0.015 0.018

Ω

V

GS

= - 4.5 V, I

D

= - 5.7 A

P-Ch 0.030 0.042

V

GS

= 4.5 V, I

D

= 7.0 A

N-Ch 0.022 0.027

V

GS

= - 2.5 V, I

D

= - 4.8 A

P-Ch 0.048 0.060

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 8.8 A

N-Ch 18

S

V

DS

= - 15 V, I

D

= - 5.7 A

P-Ch 12

Diode Forward Voltage

b

V

SD

I

S

= 1.8 A, V

GS

= 0 V

N-Ch 0.73 1.1

V

I

S

= - 1.8 A, V

GS

= 0 V

P-Ch - 0.75 - 1.1

Dynamic

a

Total Gate Charge

Q

g

N-Channel

V

DS

= 15 V, V

GS

= 5 V, I

D

= 8.8 A

P-Channel

V

DS

= - 4 V, V

GS

= - 5 V, I

D

= - 5.7 A

N-Ch 11.5 20

nC

P-Ch 13.5 20

Gate-Source Charge

Q

gs

N-Ch 3

P-Ch 2.2

Gate-Drain Charge

Q

gd

N-Ch 4

P-Ch 3

Tur n -O n D e lay T i me

t

d(on)

N-Channel

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

G

= 6 Ω

P-Channel

V

DD

= - 4 V, R

L

= 4 Ω

I

D

≅ - 1 A, V

GEN

= - 4.5 V, R

g

= 6 Ω

N-Ch 15 22

ns

P-Ch 21 40

Rise Time

t

r

N-Ch 8 15

P-Ch 45 70

Turn-Off Delay Time

t

d(off)

N-Ch 35 50

P-Ch 60 100

Fall Time

t

f

N-Ch 10 20

P-Ch 55 85

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.8 A, dI/dt = 100 A/µs

N-Ch 30 60

P-Ch 50 100

Document Number: 71922

S09-0868-Rev. D, 18-May-09

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Vishay Siliconix

Si4501ADY

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

8

16

24

32

40

0 2468 10

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 10 V thru 5 V

4 V

3 V

- On-Resistance (Ω)

0.00

0.01

0.02

0.03

0.04

0.05

0 6 12 18 24 30

R

DS(on)

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

1

2

3

4

5

6

0 3 6 9 12 15

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 15 V

I

D

= 8.8 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

8

16

24

32

40

012345

V

GS

- Gate-to-Source Voltage

- Drain Current (A)I

D

T

C

= - 55 °C

125 °C

25 °C

0

400

800

1200

1600

2000

0 6 12 18 24 30

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

V

GS

= 10 V

I

D

= 8.8 A

SI4501ADY-T1-E3

SI4501ADY-T1-E3

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