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Document Number: 71922
S09-0868-Rev. D, 18-May-09
Vishay Siliconix
Si4501ADY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 5 V thru 3.5 V
3 V
2.5 V
2 V
1.5 V
- On-Resistance (Ω)
0.00
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20 25
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
6
0 3 6 9 12 15
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= - 4 V
I
D
= 5.7 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
6
12
18
24
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= - 55 °C
125 °C
25 °C
0
400
800
1200
1600
2000
02468
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
V
GS
= 4.5 V
I
D
= 5.7 A
