MBRS10H150CT MNG

MBRS10H100CT - MBRS10H200CT
CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
RRM
A
μA
mA
dV/dt V/μs
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1309058 Version: I15
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
10.5
Typical thermal resistance 3.5
Operating junction temperature range - 55 to +175
Storage temperature range - 55 to +175
I
R
5
1
Voltage rate of change (Rated V
R
)
10000
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
V
0.85 0.88
0.75 0.75
0.95 0.97
0.85 0.85
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25°C
I
F
= 5 A, T
J
=125°C
I
F
= 10 A, T
J
=25°C
I
F
= 10 A, T
J
=125°C
V
F
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
I
FRM
10 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
120 A
Maximum DC blocking voltage 100 150 200
Maximum average forward rectified current 10
Maximum repetitive peak reverse voltage 100 150 200
Maximum RMS voltage 70 105 140
Moisture sensitivity level: level 1, per J-STD-020
Polarity: As marked
Weight: 1.4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
MBRS
10H100CT
MBRS
10H150CT
MBRS
10H200CT
UNIT
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-263AB (D
2
PAK)
TO-263AB (D
2
PAK)
Taiwan Semiconductor
10A, 100V - 200V Dual Common Cathode Schottk
y
Rectifiers
FEATURES
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1309058 Version: I15
RATINGS AND CHARACTERISTICS CURVES
Note 1: "xx" defines voltage from 100V (MBRS10H100CT) to 200V (MBRS10H200CT)
EXAMPLE
PREFERRED P/N
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
MBRS10HxxxCT
(Note 1)
H
RN
G
800 / 13" Paper reel
MN 800 / 13" Plastic reel
D
2
PAK
MBRS10H100CT - MBRS10H200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
HRN G
AEC-Q101 qualified
Green compound
MBRS10H100CTHRNG MBRS10H100CT
0
2
4
6
8
10
12
50 60 70 80 90 100 110 120 130 140 150 160 170 180
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (
°
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.0001
0.001
0.01
0.1
1
10
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE A
CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
T
J
=125°C
T
J
=25°C
T
J
=75°C
0.1
1
10
100
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
INSTANTANEOUS FORWARD A
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PULSE WIDTH=300μs
1% DUTY CYCLE
T
J
=125°C
T
J
=25°C
Min Max Min Max
A
-
10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309058 Version: I15
F9.5
G2.5
MARKING DIAGRAM
C1.1
D3.5
E 16.9
SUGGESTED PAD LAYOUT
Symbol Unit (mm)
A 10.8
B8.3
Unit (inch)
0.425
MBRS10H100CT - MBRS10H200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
TO-263AB (D
2
PAK)
0.327
0.043
0.138
0.665
0.374
0.098
100
200
300
400
500
600
700
800
900
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE(°C/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE

MBRS10H150CT MNG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 10A 150V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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