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ALM-31122-TR1G

P1-P3P4-P6P7-P9P10-P12
ALM-31122
700MHz - 1GHz
1-Watt High Linearity Amplier
Data Sheet
Description
Avago Technologies’ ALM-31122 is a high linearity 1 Watt
PA with good OIP3 performance and exceptionally good
PAE at 1dB gain compression point, achieved through the
use of Avago Technologies’ proprietary 0.25um GaAs En-
hancement-mode pHEMT process.
All matching components are fully integrated within the
module. This makes the ALM-31122 extremely easy to use.
The adjustable temperature-compensated internal bias
circuit allows the device to be operated at either class A or
class AB operation.
The ALM-31122 is housed inside a miniature 5.0 x 6.0 x 1.1
mm
3
22-lead multiple-chips-on-board (MCOB) module
package.
Component Image
5.0 x 6.0 x 1.1 mm
3
22-lead MCOB
Features
• Fully matched, input and output
• High linearity and P1dB
• Unconditionally stable across load condition
• Built-in adjustable temperature-compensated internal
bias circuitry
• GaAs E-pHEMT Technology
[1]
• 5V supply
• Excellent uniformity in product specications
• Tape-and-Reel packaging option available
• MSL-3 and Lead-free
• High MTTF for base station application
Specications
900 MHz; 5V, 394mA (typical)
• 15.6 dB Gain
• 47.6 dBm Output IP3
• 31.6 dBm Output Power at 1dB gain compression
• 52.5% PAE at P1dB
• 2 dB Noise Figure
Applications
• Class A driver amplier for GSM/CDMA Base Stations.
• General purpose gain block.
Note:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Notes:
Package marking provides orientation and identication
“31122” = Device Part Number
“WWYY” = Work week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
31122
WWYY
XXXX
1
2
3
4
5
6
7
89
10
1112
13
14
15
16
17
18
19 21
20
22
GND
GND
VDD1
GND
VCTRL
GND
GND
GND
GND
VDD2
GND
NC
GND
GND
GND
RF_OUT
GND
GND
GND
GND
GND
NC
GND
GND
RF_IN
GND
Top View
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 80 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
2
.34
.36 .38 .40 .42 .44
44 46 48 50 52
30 30.5 31 31.5 32 32.5 33
40 45 50 55 60
1
3.5 14 14.5 15 15.5 16 16.5 17 17.5
CPK = 2.22
Std Dev = 7
CPK = 4.21
Std Dev = 0.133
CPK = 4.29
Std Dev = 0.208
CPK = 5.73
Std Dev = 0.097
Std Dev = 0.65
Absolute Maximum Rating
[2]
T
A
=25°C
Symbol Parameter Units Absolute Max.
V
dd, max
Device Voltage, RF output to ground V 5.5
I
ds, max
Device Drain Current mA 750
V
ctrl,max
Control Voltage V 5.5
P
in,max
CW RF Input Power dBm 25
P
diss
Total Power Dissipation
[4]
W 4.125
T
j,max
Junction Temperature
o
C 150
T
STG
Storage Temperature
o
C -65 to 150
Product Consistency Distribution Charts
[5, 6]
Thermal Resistance
[3]
θ
jc
= 22 °C/W
(Vdd = 5V, Idd = 400mA, Tc = 85 °C)
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. Board (bottom of the device) temperature TB
is 25 °C. Derate 45.7mW/ °C for Tc > 59.3 °C.
Figure 1. Ids; LSL = 340mA, nominal = 394mA, USL = 440mA
Figure 2. OIP3; LSL = 45dBm, nominal = 47.6dBm
Figure 3. P1dB; LSL = 30dBm, nominal = 31.6dBm
Figure 4. PAE at P1dB; nominal = 52.5%
Figure 5. Gain; LSL=13.7dB, Nominal = 15.6dB, USL=17.3dB
Notes:
5. Distribution data sample size is 500 samples taken from 3 dierent
wafers. T
A
= 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz
unless otherwise specied. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
6. Measurements are made on a production test board. Input trace
losses have not been de-embedded from actual measurements.
3
Electrical Specications
[7]
T
A
= 25 °C, Vdd =5V, Vctrl=5V, RF performance at 900MHz, measured on demo board (see Figure 7) unless otherwise
specied.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Ids Quiescent current mA 340 394 440
Ictrl Vctrl current mA - 10.4 -
Gain Gain dB 13.7 15.6 17.3
OIP3
[8]
Output Third Order Intercept Point dBm 45 47.6 -
OP1dB Output Power at 1dB Gain Compression dBm 30 31.6 -
PAE Power Added Eciency % - 52 -
NF Noise Figure dB - 2.0 -
S11 Input Return Loss, 50Ω source dB - -14 -
S22 Output Return Loss, 50Ω load dB - -11 -
S12 Reverse Isolation dB - -21 -
Notes:
7. Measurements at 900MHz obtained using demo board described in Figure 6 and 7.
8. 900MHz OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -5dBm per tone measured at worse case side band.
9. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note (if applicable) for more details.
P1-P3P4-P6P7-P9P10-P12

ALM-31122-TR1G

Mfr. #:
Buy ALM-31122-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Meranti 1W 1GHz
Lifecycle:
New from this manufacturer.
Delivery:
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