10
Copyright © 2006 IXYS CORPORATION All rights reserved
IXDD514 / IXDE514
Figure 28 - Typical Application Short Circuit di/dt Limit
Low-State Output Resistance
vs. Supply Voltage
Supply Voltage (V)
10 15 20 25
Low-State Output Resistance (Ohms)
0.2
0.4
0.6
0.8
0.0
1.0
8
High State Output Resistance
vs. Supply Voltage
Supply Voltage (V)
10 15 20 25
High State Output Resistance (Ohm)
0.2
0.4
0.6
0.8
0.0
1.0
8
V
CC
vs. P Channel Output Current
C
L
=.1uF V
IN
=0-5V@1kHz
Vcc
10 15 20 25
P Channel Output Current (A)
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
8
Vcc vs. N Channel Output Current
C
L
=.1uF V
IN
=0-5V@1kHz
Vcc
10 15 20 25
N Channel Output Current (A)
0
2
4
6
8
10
12
14
16
18
20
22
24
8
Enable Threshold vs. Supply Voltage
Supply Voltage (V)
8 101214161820222426
Enable Threshold (V)
0
2
4
6
8
10
12
14
Fig. 23
Fig. 24
Fig. 25
Fig. 26
Fig. 27
IXDD514
11
IXDD514 / IXDE514
Short Circuit di/dt Limit
A short circuit in a high-power MOSFET module such as the
VM0580-02F, (580A, 200V), as shown in Figure 28, can cause
the current through the module to flow in excess of 1500A for
10µs or more prior to self-destruction due to thermal runaway.
For this reason, some protection circuitry is needed to turn off
the MOSFET module. However, if the module is switched off
too fast, there is a danger of voltage transients occuring on the
drain due to Ldi/dt, (where L represents total inductance in
series with drain). If these voltage transients exceed the
MOSFET's voltage rating, this can cause an avalanche break-
down.
The IXDD514 and IXDE514 have the unique capability to softly
switch off the high-power MOSFET module, significantly
reducing these Ldi/dt transients.
Thus, the IXDD514/IXDE514 help to prevent device destruction
from both dangers; over-current, and avalanche breakdown
due to di/dt induced over-voltage transients.
The IXDD514/IXDE514 are designed to not only provide ±14A
under normal conditions, but also to allow their outputs to go
into a high impedance state. This permits the IXDD514/
IXDE514 output to control a separate weak pull-down circuit
during detected overcurrent shutdown conditions to limit and
separately control d
VGS
/dt gate turnoff. This circuit is shown in
Figure 29.
Referring to Figure 29, the protection circuitry should include
a comparator, whose positive input is connected to the source
of the VM0580-02. A low pass filter should be added to the input
of the comparator to eliminate any glitches in voltage caused
by the inductance of the wire connecting the source resistor to
ground. (Those glitches might cause false triggering of the
comparator).
The comparator's output should be connected to a SRFF(
Set
Reset Flip Flop). The flip-flop controls both the Enable signal,
and the low power MOSFET gate. Please note that CMOS 4000-
series devices operate with a V
CC
range from 3 to 15 VDC, (with
18 VDC being the maximum allowable limit).
A low power MOSFET, such as the 2N7000, in series with a
resistor, will enable the VMO580-02F gate voltage to drop
gradually. The resistor should be chosen so that the RC time
constant will be 100us, where "C" is the Miller capacitance of
the VMO580-02F.
For resuming normal operation, a Reset signal is needed at
the SRFF's input to enable the IXDD514/IXDE514 again. This
Reset can be generated by connecting a One Shot circuit
between the IXDD514/IXDE514 Input signal and the SRFF
restart input. The One Shot will create a pulse on the rise of the
IXDD514/IXDE514 input, and this pulse will reset the SRFF
outputs to normal operation.
When a short circuit occurs, the voltage drop across the low-
value, current-sensing resistor, (Rs=0.005 Ohm), connected
between the MOSFET Source and ground, increases. This
triggers the comparator at a preset level. The SRFF drives a low
input into the Enable pin disabling the IXDD514/IXDE514
output. The SRFF also turns on the low power MOSFET,
(2N7000).
In this way, the high-power MOSFET module is softly turned off
by the IXDD514/IXDE514, preventing its destruction.
APPLICATIONS INFORMATION
10uH
Ld
0.1ohm
Rd
Rs
20nH
Ls
1ohm
Rg
10kohm
R+
VMO580-02F
High_Power
5kohm
Rcomp
100pF
C+
+
-
V+
V-
Comp
LM339
1600ohm
Rsh
Ccomp
1pF
VCC
VCCA
IN
EN
GND
OUT
IXDD409
+
-
VIN
+
-
VCC
+
-
REF
+
-
VB
CD4001A
NOR2
1Mohm
Ros
NOT2
CD4049A
CD4011A
NAND
CD4049A
NOT1
CD4001A
NOR1
CD4049A
NOT3
Low_Power
2N7002/PLP
1pF
Cos
0
S
R
EN
Q
One Shot Circuit
SR Flip-Flop
GND
Figure 29 - Application Test Diagram
IXDD514/IXDE514
12
Copyright © 2006 IXYS CORPORATION All rights reserved
IXDD514 / IXDE514
When designing a circuit to drive a high speed MOSFET utilizing the IXDD514/IXDE514, it is very important to keep certain design criteria
in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and
minimizing the Output Lead Inductance.
Say, for example, we are using the IXDD514 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns…
Using the formula: I= V C / t, where V=25V C=5000pF & t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will
take a constant current of 5A. (In reality, the charging current won’t be constant, and will peak somewhere around 8A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDD514 must be able to draw this 5A of current from the power supply in the
25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of
achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the
load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary
impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-
pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the
lengths of the leads between these bypass capacitors and the IXDD514 to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDD514 must be able to drain this 5A of current into an adequate grounding system.
There are three paths for returning current that need to be considered: Path #1 is between the IXDD514 and it’s load. Path #2 is between
the IXDD514 and it’s power supply. Path #3 is between the IXDD514 and whatever logic is driving it. All three of these paths should be
as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these
three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that
would have a detrimental effect on the logic line driving the IXDD514.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made
to keep the leads between the driver and it’s load as short and wide as possible. If the driver must be placed farther than 2” from the
load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return
line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connect directly to the ground terminal
of the load.
Supply Bypassing and Grounding Practices, Output Lead inductance

IXDE514D1T/R

Mfr. #:
Manufacturer:
Description:
IC GATE DRIVER 14A 6-DFN
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