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UPC8179TB-E3-A

P1-P3P4-P6P7-P9P10-P11
FEATURES
SILICON RFIC LOW
CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
• HIGH EFFICIENCY:
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
UPC8179TB
California Eastern Laboratories
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
APPLICATIOIN
PART NUMBER UPC8179TB
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICC Circuit Current (no input signal) mA 2.9 4.0 5.4
GP Power Gain, f = 1.0 GHz, PIN = -30 dBm dB 11.0 13.5 15.5
f = 1.9 GHz, PIN = -30 dBm 13.0 15.5 17.5
f = 2.4 GHz, PIN = -30 dBm 13.0 15.5 17.5
ISOL Isolation, f = 1.0 GHz, PIN = -30 dBm dB 39.0 44.0 –
f = 1.9 GHz, PIN = -30 dBm 37.0 42.0 –
f = 2.4 GHz, PIN = -30 dBm 36.0 41.0 –
P1dB Output Power at f = 1.0 GHz dB -0.5 3.0 –
1 dB gain f = 1.9 GHz -2.0 1.5 –
compression, f = 2.4 GHz -3.0 1.0 –
NF Noise Figure, f = 1.0 GHz dB – 5.0 6.5
f = 1.9 GHz – 5.0 6.5
f = 2.4 GHz – 5.0 6.5
RLIN Input Return Loss, f = 1.0 GHz, PIN = -30 dBm dB 4.0 7.0 –
(without matching f = 1.9 GHz, PIN = -30 dBm 4.0 7.0 –
circuit) f = 2.4 GHz, PIN = -30 dBm 6.0 9.0 –
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
+10
0
+20
–10
–40
–20
–30
0.1 0.3
1.0 3.0
V
CC
= 3.0 V
1.0 GHz
2.4 GHz
1.9 GHz
T
A
= -40°C
T
A
= +85°C
T
A
= +25°C
POWER GAIN vs. FREQUENCY
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (
Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
DESCRIPTION
Output match for best performance
at each frequency
UPC8179TB
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
V
CC Supply Voltage, Pins 4 & 6 V 3.6
ICC Circuit Current mA 15
PD Power Dissipation
2
mW 270
TOP Operating Temperature °C -40 to +85
TSTG Storage Temperature °C -55 to +150
PIN Input Power dBm +5
SYMBOLS PARAMETERS UNITS MIN TYP MAX
VCC Supply Voltage V 2.7 3.0 3.3
TA Operating Ambient °C -40 +25 +85
Temperature
RECOMMENDED
OPERATING CONDITIONS
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A = +85°C).
Pin No. Symbol Pin Voltage Description Internal Equivalent Circuit
1 INPUT
2 GND through external inductor
3
5
4 OUTPUT Same as VCC voltage
6VCC 2.4 to 3.3
PIN FUNCTIONS
1.09 V
Signal Input Pin. A internal
matching circuit, configured with
resistors, enable 50 W connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
Ground pin. This pin should be
connected to the system ground with
minimum inductance. Ground pattern
on the board should be formed as
wide as possible. All the ground pins
must be connected together with
wide ground pattern to decrease
impedance difference.
Signal output pin. This pin is
designed as collector output. Due
to the high impedance output, this
pin should be externally equipped
with matching LC matching circuit
to next stage. For L, a size 1005
chip inductor can be chosen.
Power supply pin. This pin should
be externally equipped with bypass
capacitor to minimize its impedance.
5
6
2
4
3
1
5
4
3
2
1
0
–60
No signals
Vcc = 3.0 V
–40 –20 0 +20 +40 +60 +80 +100
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
CIRCUIT CURRENT vs. TEMPERATURE
Temperature, TA (°C)
Circuit Current, I
CC
(mA)
CIRCUIT CURRENT vs. VOLTAGE
Circuit Current, I
CC
(mA)
Voltage, VCC (V)
5
4
3
2
1
0
1
0
2
34
No signals
+20
+10
0
–20
–10
0.1 0.3 1.0
3.0
TA = –40 ºC
TA = +85ºC
TA = +25 ºC
Vcc = 3.0 V
–30
–40
–
10
–
20
–
30
–
50
–
40
T
A
= –40 ºC
T
A
= +25ºC
V
CC
= 3.0 V
–
60
0.1 0.3 1.0 3.0
–
70
T
A
= +85 ºC
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
Gain, G
P
(dB)
Frequency, f (GHz)
GAIN vs. FREQUENCY
0.1 0.3 1.0 3.0
–
30
–
25
–
20
–
15
–
10
–5
0
T
A
= +85 ºC
T
A
= +25 ºC
T
A
= –40 ºC
V
cc
= 3.0 V
+5
0
–5
–
10
–
15
–
20
–
25
0.1 0.3 1.0
3.0
V
CC
= 3.0 V
TA = +85ºC
TA = –40ºC
TA = +25ºC
Isolation, ISOL (dB)
Frequency, f (GHz)
ISOLATION vs. FREQUENCY
1.0 GHz Output Port Matching
0
-10
-20
-30
-40
-50
-60
–20
–15
–10
–5
0
+5
Vcc = 3.3 V
Vcc = 2.4 V
Vcc = 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
INPUT RETURN LOSS vs. FREQUENCY
+10
–10
0
0–10
+5
+5–5
–5
–15
–15
–20
–20–25–30–35–40
–25
–30
V
CC
= 3.0 V
T
A
= –40ºC
T
A
= +25ºC
T
A
= +85ºC
Input Return Loss, RL
IN
(dB)
Frequency, f (GHz)
Frequency, f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
Output Return Loss, RL
OUT
(dBm)
Output Power, P
OUT
(dBm)
Input Power, PIN (dBm)
OUTPUT POWER vs. INPUT POWER
Output Power of Each Tone, POUT (dBm)
Thirf Order Intermodulation Distortion,
IM
3
(dBc)
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
P1-P3P4-P6P7-P9P10-P11

UPC8179TB-E3-A

Mfr. #:
Buy UPC8179TB-E3-A
Manufacturer:
CEL
Description:
RF Amplifier RFIC Low Current Amp
Lifecycle:
New from this manufacturer.
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