FFSH4065A

© Semiconductor Components Industries, LLC, 2017
April, 2018 Rev. 1
1 Publication Order Number:
FFSH4065A/D
FFSH4065A
Silicon Carbide Schottky
Diode
650 V, 40 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 182 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
TO2472LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH4065A = Specific Device Code
1
2
1. Cathode 2. Anode
$Y&Z&3&K
FFSH
4065A
FFSH4065A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 182 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 145°C 40 A
Continuous Rectified Forward Current @ T
C
< 135°C 48 A
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
1300 A
T
C
= 150°C, 10 ms
1200 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 180 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 85 A
Ptot Power Dissipation
T
C
= 25°C 349 W
T
C
= 150°C 58 W
T
J
, T
STG
Operating and Storage Temperature Range 55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 182 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 27 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 0.43 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 40 A, T
C
= 25°C 1.50 1.75
V
I
F
= 40 A, T
C
= 125°C 1.60 2.0
I
F
= 40 A, T
C
= 175°C 1.72 2.4
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C 200 mA
V
R
= 650 V, T
C
= 125°C 400
V
R
= 650 V, T
C
= 175°C 600
Q
C
Total Capacitive Charge V = 400 V 119 nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz 1989
pF
V
R
= 200 V, f = 100 kHz 218
V
R
= 400 V, f = 100 kHz 164
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH4065A FFSH4065A TO2472LD 30 Units / Tube
FFSH4065A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
0123456
0
40
80
120
160
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= 55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
10
9
10
8
10
7
10
6
10
5
T
J
= 55
o
C
T
J
= 175
o
C
T
J
= 75
o
C
T
J
= 125
o
C
T
J
= 25
o
C
I
R
, REVERSE CURRENT (mA)
V
R
25 50 75 100 125 150 175
0
100
200
300
400
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175
0
100
200
300
400
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
0 200 400 600
0
30
60
90
120
150
180
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
10
100
1000
10000
CAPACITANCE (pF)
V
R
650
100 200 400 600 650300 500
1 100 6500.1 10
, REVERSE VOLTAGE (V)
, REVERSE VOLTAGE (V)

FFSH4065A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 650V 40A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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