P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*60 Volt V
DS
*R
DS(on)
=14Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T
amb
=25°C I
D
-160 mA
Pulsed Drain Current I
DM
-1.6 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
µA
µA
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
-400 mA V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
Ω
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60 mS V
DS
=-18V,I
D
=-200mA
Input Capacitance (2) C
iss
50 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
8pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈-18V, I
D
=-200mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
8ns
Fall Time (2)(3) t
f
8ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(
3
)
wi
hin
im
m
r
wi
h
Ω
r
im
n
n
<
n
ri
im
n
l
n
r
r
E-Line
TO92 Compatible
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D
-
D
r
a
i
n
C
u
r
r
e
nt (Amps
)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Nor
m
ali
s
e
d
R
DS(on)
a
nd V
G
S(th)
-40
-20 0 20 40 60 80
120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ain
-
S
o
u
rc
e R
e
s
i
s
tance
R
D
S(
o
n
)
G
ate
T
h
res
h
o
l
d
V
o
l
tag
e
V
GS
(
T
H
)
I
D=
0.37A
0-2 -4 -6 -8 -10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0 -10 -20 -30 -40 -50
Saturation Characteristics
On-resistance vs Drain Current
ID-Drain Current (mA)
-6
0
-2
-4
-8
0-2 -4 -6-8-10
-10
V
DS-
Drain Source
Voltage (Volts)
RDS(on)-Drain Source On Resistance
(Ω)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-0.6
0
-0.2
-0.4
-0.8
0-2-4-6-8-10
-1.0
V
GS=
-20V
-16V
-6V
-7V
-8V
-5V
-4V
-16V
-9V
I
D=
-
400mA
-200mA
-100mA
V
DS=-
10V
VGS-Gate Source Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-1.2
-10V
-9V
-10V
-6V
2.6
180
10
1
100
-10
-100 -1000
V
GS
=-5V
V
GS=
-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
-14V
-12V
I
D
- Drain Curre
n
t (
Amps)
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
-
On-Sta
t
e D
r
ain
Current (Amp
s
)
ZVP3306A
3-4293-430
