NTTFS4929N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 20 A
V
GS
= 10 V
10 15 20 25
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (A)
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
11
0246810121416
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 20 A
Q
gs
Q
gd
Q
T
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
GS
= 10 V
V
DD
= 4.5 V
I
D
= 15 A
t
d(off)
t
d(on)
t
f
t
r
0
5
10
15
20
25
30
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
