Nexperia
BC847RA
45 V, 100 mA NPN/NPN general-purpose double transistors
BC847RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 June 2017 3 / 11
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current - 200 mA
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 325 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 480 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
-75 17512525 75-25
aaa-024487
200
300
100
400
500
P
tot
(mW)
0
FR4 PCB, standard footprint
Fig. 1. Per device: Power derating curve
