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TSHF4410

P1-P3P4-P5
TSHF4410
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
1
Document Number: 81276
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λ
p
= 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 12 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements
and for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8636
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) tr (ns)
TSHF4410 40 ± 22 890 30
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHF4410 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1.5 A
TSHF4410
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
2
Document Number: 81276
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
300 K/W
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21311
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21312
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.4 3.0 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
40 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
400 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
40 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
- 0.35 %/K
Angle of half intensity ϕ ± 22 deg
Peak wavelength I
F
= 100 mA λ
p
890 nm
Spectral bandwidth I
F
= 100 mA Δλ 44 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
30 ns
Fall time I
F
= 100 mA t
f
30 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
12 MHz
Virtual source diameter Method: 63 % encircled energy d 1.9 mm
TSHF4410
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 24-Aug-11
3
Document Number: 81276
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
t
p
- Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
18873
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
024
t
p
= 100 µs
t
p
/T = 0.001
13
16961
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
- Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
800 900
λ - Wavelength (nm)
1000
20016
0
0.25
0.5
0.75
1.0
1.25
e,rel
- Relative Radiant Power
Φ
94 8883
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
P1-P3P4-P5

TSHF4410

Mfr. #:
Buy TSHF4410
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters IR EMITTER DH 890NM 3MM 22DEG-e2
Lifecycle:
New from this manufacturer.
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