OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MBRA210LT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 6
1 Publication Order Number:
MBRA210LT3/D
MBRA210L, NRVBA210L
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes. Typical applications are
AC−DC and DC−DC converters, reverse battery protection, and
“Oring” of multiple supply voltages and any other application where
performance and size are critical.
Features
• Ultra Low V
F
• 1st in the Market Place with a 10 V
R
Schottky Rectifier
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Optimized for Low Forward Voltage
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3A
SCHOTTKY BARRIER
RECTIFIER
2 AMPERES
10 VOLTS
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MBRA210LT3G SMA
(Pb−Free)
5,000 / Tape
& Reel
MARKING DIAGRAM
SMA
CASE 403D
B2L1
AYWW
G
B2L1 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
NRVBA210LT3G* SMA
(Pb−Free)
5,000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA210L, NRVBA210L
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
10 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 110°C)
I
O
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
160
A
Storage/Operating Case Temperature
Operating Junction Temperature
T
stg
, T
C
T
J
−55 to +125 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Min Pad 1 Inch Pad Unit
Thermal Resistance, Junction−to−Lead
Thermal Resistance, Junction−to−Ambient
R
q
JL
R
q
JA
22
150
15
81
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
V
F
T
J
= 25°C T
J
= 100°C V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.260
0.325
0.350
0.15
0.23
0.26
Maximum Instantaneous Reverse Current I
R
T
J
= 25°C T
J
= 100°C mA
(V
R
= 5.0 V)
(V
R
= 10 V)
0.25
0.70
40
60
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
Figure 1. Typical Forward Voltage
0.1 0.2 0.40.15 0.45
100
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.15 0.35 0.450.25 0.55
100
0.1
1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
I
F
, MAXIMUM INSTANTANEOUS
FORWARD CURRENT (AMPS)
V
F
@ 125°C
100°C
75°C
V
F
@ 125°C
0.05 0.050.30.25 0.35
25°C
10
10
25°C
100°C
75°C
MBRA210L, NRVBA210L
www.onsemi.com
3
Figure 3. Typical Reverse Current
261004 8
I
R
, REVERSE CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E−01
I
R
@ 125°C
100°C
75°C
25°C
1.0E−02
1.0E−03
1.0E−04
1.0E−05
Figure 4. Current Derating − Junction to Lead
90 100 110 13095 120
0
3.5
I
F
, AVERAGE FORWARD
CURRENT (AMPS)
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Forward Power Dissipation
1 2.5 30 2 3.5
0.9
0
0.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Typical Capacitance
261004 8
10,000
100
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
1000
1
2
3
2.5
SQUARE WAVE
dc
RATED VOLTAGE
APPLIED
R
q
JL
= 22 °C/W
T
J
= 125°C
0.2
0.4
0.6
T
J
= 125°C
SQUARE WAVE
dc
105 115 125
0.5
1.5
0.5 1.5
0.1
0.3
0.7
0.8
15937
25°C
f = 1 MHz
P1-P3P4-P5

MBRA210LT3G

Mfr. #:
Buy MBRA210LT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2A 10V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet