MUBW75-06A8 Datasheet MUBW75-06A8 | P1-P3

1 - 4

20070912a

MUBW 75-06 A8

IXYS reserves the right to change limits, test conditions and dimensions.

Converter - Brake - Inverter Module (CBI3)

NTC

D11 D13 D15

D12

D14

D16

1

23

D7

T7

T1

D1

T3

D3

T2

T4

T6

T5

D4

D2

D6

D5

21

22

7

6

4

5

16

15

18

17

20

19

11

10

23

24

14

8

9

12 13

Three Phase Brake Chopper Three Phase

Rectifier Inverter

V

RRM

= 1600 V V

CES

= 600 V V

CES

= 600 V

I

FAVM

= 70 A I

C25

= 50 A I

C25

= 100 A

I

FSM

= 700 A V

CE(sat)

= 2.0 V V

CE(sat)

= 2.0 V

Input Rectifier D11 - D16

Symbol Conditions Maximum Ratings

V

RRM

1600 V

I

FAV

T

C

= 80°C; sine 180° 50 A

I

DAVM

T

C

= 80°C; rectangular; d = 1/3; bridge 140 A

I

FSM

T

VJ

= 25°C; t = 10 ms; sine 50 Hz 700 A

P

tot

T

C

= 25°C 135 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

F

I

F

= 75 A; T

VJ

= 25°C 1.2 1.4 V

T

VJ

= 125°C 1.2 V

I

R

V

R

= V

RRM

;

T

VJ

= 25°C 0.05 mA

T

VJ

= 125°C 0.8 mA

R

thJC

(per diode) 0.94 K/W

Application: AC motor drives with

€

€ Input from single or three phase grid

€

€ Three phase synchronous or

asynchronous motor

€

€ electric braking operation

Features

€

€ High level of integration - only one power

semiconductor module required for the

whole drive

€

€ NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

€

€ Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

€

€ Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

€

€ Temperature sense included

Preliminary data

See outline drawing for pin arrangement

E72873

2 - 4

20070912a

MUBW 75-06 A8

IXYS reserves the right to change limits, test conditions and dimensions.

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at V

GE

= 15 V; T

J

= 125°C)

T1-T6

V

0

= 1.21 V; R

0

= 15 m

Ω

T7

V

0

= 1.06 V; R

0

= 36 m

Ω

Diode (typ. at T

J

= 125°C)

D1-D6

V

0

= 1.1 V; R

0

= 2 m

Ω

D7

V

0

= 1.1 V; R

0

= 12 m

Ω

D11-D16

V

0

= 0.85 V; R

0

= 5 m

Ω

Thermal Response

IGBT (typ.)

T1-T6

C

th1

= 0.177 J/K; R

th1

= 0.293 K/W

C

th2

= 1.228 J/K; R

th2

= 0.097 K/W

T7

C

th1

= 0.088 J/K; R

th1

= 0.583 K/W

C

th2

= 0.799 J/K; R

th2

= 0.167 K/W

Diode (typ.)

D1-D6

C

th1

= 0.138 J/K; R

th1

= 0.48 K/W

C

th2

= 0.957 J/K; R

th2

= 0.13 K/W

D7

C

th1

= 0.038 J/K; R

th1

= 1.725 K/W

C

th2

= 0.439 J/K; R

th2

= 0.375 K/W

D11-D16

C

th1

= 0.086 J/K; R

th1

= 0.738 K/W

C

th2

= 0.621 J/K; R

th2

= 0.202 K/W

Output Inverter T1 - T6

Symbol Conditions Maximum Ratings

V

CES

T

VJ

= 25°C to 150°C 600 V

V

GES

Continuous

±

20 V

I

C25

T

C

= 25°C 100 A

I

C80

T

C

= 80°C 65 A

RBSOA V

GE

=

±

15 V; R

G

= 15 Ω; T

VJ

= 125°C I

CM

= 150 A

Clamped inductive load; L = 100 µH V

CEK

≤ V

CES

t

SC

V

CE

= V

CES

; V

GE

=

±

15 V; R

G

= 15 Ω; T

VJ

= 125°C 10 µs

(SCSOA) non-repetitive

P

tot

T

C

= 25°C 320 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

I

C

= 75 A; V

GE

= 15 V; T

VJ

= 25°C 2.0 2.5 V

T

VJ

= 125°C 2.3 V

V

GE(th)

I

C

= 1.5 mA; V

GE

= V

CE

4.5 6.5 V

I

CES

V

CE

= V

CES

;

V

GE

= 0 V; T

VJ

= 25°C 1.4 mA

T

VJ

= 125°C 1.5 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V 200 nA

t

d(on)

150 ns

t

r

60 ns

t

d(off)

450 ns

t

f

40 ns

E

on

4.0 mJ

E

off

3.3 mJ

C

ies

V

CE

= 25 V; V

GE

= 0 V; f = 1 MHz 4.2 nF

Q

Gon

V

CE

= 300V; V

GE

= 15 V; I

C

= 100 A 260 nC

R

thJC

(per IGBT) 0.39 K/W

Inductive load, T

VJ

= 125°C

V

CE

= 300 V; I

C

= 75 A

V

GE

=

±

15 V; R

G

= 15 Ω

Output Inverter D1 - D6

Symbol Conditions Maximum Ratings

I

F25

T

C

= 25°C 140 A

I

F80

T

C

= 80°C 85 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

F

= 75 A; V

GE

= 0 V; T

VJ

= 25°C 1.7 2.0 V

T

VJ

= 125°C 1.2 V

I

RM

I

F

= 60 A; di

F

/dt = -500 A/µs; T

VJ

= 125°C 28 A

t

rr

V

R

= 300 V; V

GE

= 0 V 100 ns

R

thJC

(per diode) 0.61 K/W

3 - 4

20070912a

MUBW 75-06 A8

IXYS reserves the right to change limits, test conditions and dimensions.

Brake Chopper T7

Symbol Conditions Maximum Ratings

V

CES

T

VJ

= 25°C to 150°C 600 V

V

GES

Continuous

±

20 V

I

C25

T

C

= 25°C 50 A

I

C80

T

C

= 80°C 35 A

RBSOA V

GE

=

±

15 V; R

G

= 33 Ω; T

VJ

= 125°C I

CM

= 60 A

Clamped inductive load; L = 100 µH V

CEK

≤ V

CES

t

SC

V

CE

= V

CES

; V

GE

=

±

15 V; R

G

= 33 Ω; T

VJ

= 125°C 10 µs

(SCSOA) non-repetitive

P

tot

T

C

= 25°C 165 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

I

C

= 35 A; V

GE

= 15 V; T

VJ

= 25°C 2.0 2.5 V

T

VJ

= 125°C 2.3 V

V

GE(th)

I

C

= 0.7 mA; V

GE

= V

CE

4.5 6.5 V

I

CES

V

CE

= V

CES

;

V

GE

= 0 V; T

VJ

= 25°C 0.5 mA

T

VJ

= 125°C 0.3 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V 200 nA

t

d(on)

50 ns

t

r

50 ns

t

d(off)

270 ns

t

f

40 ns

E

on

1.63 mJ

E

off

1.17 mJ

C

ies

V

CE

= 25 V; V

GE

= 0 V; f = 1 MH z 1.6 nF

Q

Gon

V

CE

= 300 V; V

GE

= 15 V; I

C

= 25 A 94 nC

R

thJC

0.75 K/W

Inductive load, T

VJ

= 125°C

V

CE

= 300 V; I

C

= 35 A

V

GE

=

±

15 V; R

G

= 33 Ω

Brake Chopper D7

Symbol Conditions Maximum Ratings

V

RRM

T

VJ

= 25°C to 150°C 600 V

I

F25

T

C

= 25°C 35 A

I

F80

T

C

= 80°C 24 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

I

F

= 35 A; T

VJ

= 25°C 2.0 2.3 V

T

VJ

= 125°C 1.5 V

I

R

V

R

= V

RRM

;

T

VJ

= 25°C 0.1 mA

T

VJ

= 125°C 0.1 mA

I

RM

I

F

= 15 A; di

F

/dt = -400 A/µs; T

VJ

= 125°C 13 A

t

rr

V

R

= 300 V 90 ns

R

thJC

2.1 K/W

MUBW75-06A8

MUBW75-06A8

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