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V10D120C-M3/I

P1-P3P4-P5
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
1
Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.53 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
120 V
I
FSM
100 A
V
F
at I
F
= 5.0 A (T
A
= 125 °C) 0.64 V
T
J
max. 150 °C
Package TO-263AC (SMPD)
Diode variations Dual common cathode
V10D120C
Top View Bottom View
PIN 1
K
HEATSINK
PIN 2
TMBS
®
eSMP
®
Series
TO-263AC (SMPD)
K
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10D120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
10
A
per diode 5
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
2
Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.61 -
V
I
F
= 5 A 0.79 0.94
I
F
= 2.5 A
T
A
= 125 °C
0.53 -
I
F
= 5 A 0.64 0.72
Reverse current at rated V
R
per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
2.3 - μA
T
A
= 125 °C 2.3 - mA
V
R
= 120 V
T
A
= 25 °C - 500 μA
T
A
= 125 °C 5 15 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10D120C UNIT
Typical thermal resistance
per diode
R
JC
3.5
°C/Wper device 2.5
per device R
JA
(1)(2)
48
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N
UNIT WEIGHT
(g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AC (SMPD) V10D120C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel
TO-263AC (SMPD) V10D120CHM3/I
(1)
0.55 I 2000/reel 13" diameter plastic tape and reel
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C)
R
thJA
= 48 °C/W
R
thJC
= 2.5 °C/W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-Feb-15
3
Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
A
A
A
A
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p
-p
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
20
25
30
35
40
45
50
123456789
Thermal Resistance (°C/W)
Copper Pad Areas (cm
2
)
S (cm
2
)
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
P1-P3P4-P5

V10D120C-M3/I

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Buy V10D120C-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A 120V TrenchMOS
Lifecycle:
New from this manufacturer.
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