VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
Revision: 05-Dec-16
2
Document Number: 93583
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
600 A
100 °C
Maximum RMS forward current I
F(RMS)
180° conduction, half sine wave at T
C
= 100 °C 942 A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
19.0
kA
t = 8.3 ms 20.1
t = 10 ms
100 % V
RRM
reapplied
16.2
t = 8.3 ms 17.2
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1805
kA
2
s
t = 8.3 ms 1683
t = 10 ms
100 % V
RRM
reapplied
1319
t = 8.3 ms 1230
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 18 050 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 0.70
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.77
Low level value of forward slope resistance r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 0.28
m
High level value of forward slope resistance r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.25
Maximum forward voltage drop V
FM
I
pk
= 1800 A, T
J
= 25 °C, t
p
= 10 ms sine pulse 1.45 V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
RMS insulation voltage V
INS
t = 1 s 3000 V
Maximum peak reverse and off-state leakage
current
I
RRM
T
J
= T
J
maximum, rated V
RRM
applied 50 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation 0.065
K/W
Maximum thermal resistance,
case to heatsink per module
R
thC-hs
Mounting surface smooth, flat and greased 0.02
Mounting torque ± 10 %
SMAP to heatsink A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
6 to 8
Nm
busbar to SMAP 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.009 0.006
T
J
= T
J
maximum K/W
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
