TSM220NB06CR RLG

TSM220NB06CR
Taiwan Semiconductor
4 Version: B1804
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 10 20 30 40 50 60
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
I
D
=5mA
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25
-55
175
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
R
ӨJC
=2.2C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
1
10
100
1000
0.1 1 10 100
R
DS(ON)
SINGLE PULSE
R
ӨJC
=2.2°C/W
T
C
=25
°
C
TSM220NB06CR
Taiwan Semiconductor
5 Version: B1804
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
= Halogen Free
Y
= Year Code
WW
= Week Code (01~52)
F
= Factory Code
TSC
220NB06
GYWWF
TSC
220NB06
GYWWF
TSM220NB06CR
Taiwan Semiconductor
6 Version: B1804
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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TSM220NB06CR RLG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 60V 35A Single N-Chan Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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