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MT3S113P(TE12L,F)

P1-P3P4-P6P7-P7
MT3S113P
2014-03-01 4
|S
21e
|
2
-I
C
NF-I
C
Insertion gain |S
21e
|
2
(dB)
0
2
4
6
8
10
12
14
16
18
110100
VCE=3V
Ta= 25°C
f = 1GHz
f = 500MHz
C
Noise figure NF(dB)
0
0.5
1
1.5
2
2.5
110100
VCE=3V
Ta=25°C
f = 500MHz
f = 1GHz
Collector-current I
C
(mA)
Collector-current I
C
(mA)
|S
21e
|
2
-I
C
NF-I
C
Insertion gain |S
21e
|
2
(dB)
0
2
4
6
8
10
12
14
16
18
110100
VCE=4V
Ta= 25°C
f = 1GHz
f = 500MHz
Noise figure NF(dB)
0
0.5
1
1.5
2
2.5
110100
VCE=4V
Ta=25°C
f = 500MHz
f = 1GHz
Collector-current I
C
(mA)
Collector-current I
C
(mA)
|S
21e
|
2
-I
C
NF-I
C
Insertion gain |S
21e
|
2
(dB)
0
2
4
6
8
10
12
14
16
18
110100
VCE=5V
Ta= 25°C
f = 1GHz
f = 500MHz
Noise figure NF(dB)
0
0.5
1
1.5
2
2.5
110100
VCE=5V
Ta= 25°C
f = 500MHz
f = 1GHz
Collector-current I
C
(mA)
Collector-current I
C
(mA)
MT3S113P
2014-03-01 5
IM3/P
out
-P
in
OIP
3
-I
C
Third order intermodulation distortion IM3(dBmW)
Output level P
out
(dBmW)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
-50 -40 -30 -20 -10 0 10 20
f1=500MHz
f2=501MHz
VCE=3V
IC=50mA
Ta=25°C
Pout
IM3
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
10
15
20
25
30
35
40
1 10 100
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=3V
Ta=25°C
Input level P
in
(dBmW)
Collector-current I
C
(mA)
IM3/P
out
-P
in
OIP
3
-I
C
Third order intermodulation distortion IM3(dBmW)
Output level P
out
(dBmW)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
-50 -40 -30 -20 -10 0 10 20
f1=500MHz
f2=501MHz
VCE=4V
IC=50mA
Ta=25°C
Pout
IM3
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
10
15
20
25
30
35
40
1 10 100
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=4V
Ta=25°C
Input level P
in
(dBmW)
Collector-current I
C
(mA)
IM3/P
out
-P
in
OIP
3
-I
C
Third order intermodulation distortion IM3(dBmW)
Output level P
out
(dBmW)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
-50 -40 -30 -20 -10 0 10 20
f1=500MHz
f2=501MHz
VCE=5V
IC=50mA
Ta=25°C
Pout
IM3
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
10
15
20
25
30
35
40
1 10 100
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=5V
Ta=25°C
Input level P
in
(dBmW)
Collector-current I
C
(mA)
MT3S113P
2014-03-01 6
⊿P
out
-P
out
G
P
-P
in
⊿P
out
-2
-1.5
-1
-0.5
0
0.5
1
-10 0 10 20
f=500MHz
IC=50m A
Ta=25°C
3V 4V 5V
G
P
(dB)
10
11
12
13
14
15
16
17
18
-30 -20 -10 0 10
3V 4V 5V
f=500MHz
IC=50m A
Ta=25°C
Output level P
out
(dBmW)
Input level P
in
(dBmW)
P
C
-T
a
Collector power dissipation P
C
(mW)
0
200
400
600
800
1000
1200
1400
1600
1800
0 25 50 75 100 125 150
The device is mounted on a ceramic-
board(25.4mm×25.4mm×0.8mm(t))
Device only
Ambient temperature T
a
(°C)
P1-P3P4-P6P7-P7

MT3S113P(TE12L,F)

Mfr. #:
Buy MT3S113P(TE12L,F)
Manufacturer:
Toshiba
Description:
RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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