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BCP53T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 12
1 Publication Order Number:
BCP53T1/D
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
• Device Marking:
BCP53T1G = AH
BCP53−10T1G = AH−10
BCP53−16T1G = AH−16
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
−80 Vdc
Collector−Base Voltage V
CBO
−100 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current I
C
1.5 Adc
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
R
q
JA
83.3 °C/W
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
s
Device Package Shipping
†
ORDERING INFORMATION
SOT−223
CASE 318E
STYLE 1
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
MARKING DIAGRAM
BCP53T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
BCP53−16T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
BCP53−10T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
BCP53−16T3G SOT−223
(Pb−Free)
4000/Tape & Ree
l
1
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G = Pb−Free Package
AYW
XXXXXG
G
(Note: Microdot may be in either location)
SBCP53−16T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
SBCP53−10T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
SBCP53−10T1G SOT−223
(Pb−Free)
1000/Tape & Ree
l
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
2
4
3
NSVBCP53−16T3G SOT−223
(Pb−Free)
4000/Tape & Ree
l
BCP53 Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−100 − −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−80 − −
Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −100 mAdc, R
BE
= 1.0 kW)
V
(BR)CER
−100 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − −
Vdc
Collector−Base Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
I
CBO
− − −100
nAdc
Emitter−Base Cutoff Current
(V
EB
= −5.0 Vdc, I
C
= 0)
I
EBO
− − −10
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −5.0 mAdc, V
CE
= −2.0 Vdc)
All Part Types
(I
C
= −150 mAdc, V
CE
= −2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16, NSVBCP53−16
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
All Part Types
h
FE
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
− − −0.5
Vdc
Base−Emitter On Voltage
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
V
BE(on)
− − −1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 35 MHz)
f
T
− 50 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BCP53 Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0
0.2
0.6
0.8
1.0
1.4
1.8
2.0
Figure 3. DC Current Gain vs. Collector
Current (BCP53−10)
Figure 4. DC Current Gain vs. Collector
Current (BCP53−16)
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
Figure 5. BCP53, −10 Base Emitter Saturation
Voltage vs. Collector Current
Figure 6. BCP53−16 Base Emitter Saturation
Voltage vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
V
ce(sat)
, COLLECTOR EMITTER SAT-
URATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
V
be(sat)
, BASE EMITTER SATURA-
TION VOLTAGE (V)
0.4
1.2
1.6
IC/IB = 10 BCP53, −10, −16
+150°C
+25°C
−55°C
1010.10.010.001
0
20
60
80
100
140
180
200
40
120
160
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
−55°C, 5 V
−55°C, 2 V
1010.10.010.001
0
20
60
80
100
140
180
40
120
160
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
−55°C, 5 V
−55°C, 2 V
1010.10.010.001
0
100
150
200
300
50
250
150°C, 5 V
150°C, 2 V
25°C, 5 V
25°C, 2 V
−55°C, 5 V
−55°C, 2 V
1010.10.010.001
0.4
0.6
0.7
0.8
0.9
1.1
1.2
0.5
1.0
IC/IB = 10 BCP53, −10
+150°C
+25°C
−55°C
I
C
, COLLECTOR CURRENT (A)
V
be(sat)
, BASE EMITTER SATURA-
TION VOLTAGE (V)
1010.10.010.001
0.4
0.6
0.7
0.8
0.9
1.1
1.2
0.5
1.0
IC/IB = 10 BCP53 −16
+150°C
+25°C
−55°C
P1-P3P4-P5

BCP53T1G

Mfr. #:
Buy BCP53T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 1.5A 100V PNP
Lifecycle:
New from this manufacturer.
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