IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
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Vishay Siliconix
S12-0168-Rev. D, 04-Feb-13
2
Document Number: 91276
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Case-to-Sink, Flat, Greased Surface
R
thCS
0.50 -
Maximum Junction-to-Case (Drain)
R
thJC
-1.1
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.60 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.5 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 3.0 A
b
--1.7
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 3.0 A 2.3 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 490 -
pFOutput Capacitance C
oss
-75-
Reverse Transfer Capacitance C
rss
-4.5-
Output Capacitance C
oss
V
GS
= 10 V
V
DS
= 1.0 V, f = 1.0 MHz - 750 -
pFV
DS
= 400 V, f = 1.0 MHz - 25 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c
-51-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 5.0 A, V
DS
= 400 V,
see fig. 6 and 13
b
--24
nC Gate-Source Charge Q
gs
--6.5
Gate-Drain Charge Q
gd
--13
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 5.0 A,
R
g
= 15 , R
D
= 50 , see fig. 10
b
-8.7-
ns
Rise Time t
r
-27-
Turn-Off Delay Time t
d(off)
-17-
Fall Time t
f
-16-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--5.0
A
Pulsed Diode Forward Current
a
I
SM
--20
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 5.0 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 5.0 A, dI/dt = 100 A/μs
b
- 410 620 ns
Body Diode Reverse Recovery Charge Q
rr
-1.42.1μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
