IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
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Vishay Siliconix
S12-0168-Rev. D, 04-Feb-13
4
Document Number: 91276
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 4 8 12 16 20
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
5.0A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
10 100 1000 10000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
