74HC_HCT1G66_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 16 September 2013 8 of 19
NXP Semiconductors 74HC1G66-Q100; 74HCT1G66-Q100
Single-pole single-throw analog switch
[1] All typical values are measured at T
amb
=25C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[3] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
V
CC
2
f
i
+ ((C
L
C
SW
) V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
C
SW
= maximum switch capacitance in pF (see Table 7);
V
CC
= supply voltage in Volt;
((C
L
C
SW
) V
CC
2
f
o
) = sum of outputs.
t
dis
disable time E to Y or Z; see Figure 9
[2]
V
CC
= 2.0 V - 27 190 - 225 ns
V
CC
= 4.5 V - 16 38 - 45 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - ns
V
CC
= 6.0 V - 14 33 - 38 ns
V
CC
= 9.0 V - 12 16 - 20 ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
[3]
-9-- -pF
74HCT1G66-Q100
t
pd
propagation delay Y to Z or Z to Y; R
L
= ;
see Figure 8
[2]
V
CC
= 4.5 V - 3 15 - 18 ns
t
en
enable time E to Y or Z; see Figure 9
[2]
V
CC
= 4.5 V - 15 30 - 36 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
t
dis
disable time E to Y or Z; see Figure 9
[2]
V
CC
= 4.5 V - 13 44 - 53 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - ns
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
1.5 V
[3]
-9-- -pF
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); C
L
=50pF; R
L
=1 k
, unless otherwise specified;
For test circuit, see Figure 10.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max