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IRFB4229PBF

P1-P3P4-P6P7-P8
www.irf.com 1
09/10/07
IRFB4229PbF
Notes through are on page 8
Description
This HEXFET
®
Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
S
D
G
TO-220AB
D
S
D
G
GDS
Gate Drain Source
V
DS
min
250 V
V
DS (Avalanche)
typ.
300 V
R
DS(ON)
typ. @ 10V
38
m
I
RP
max @ T
C
= 100°C
91 A
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
I
RP
@ T
C
= 100°C
Repetitive Peak Current
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 0.45
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient
––– 62
91
300
-40 to + 175
10lb
in (1.1N m)
330
190
2.2
Max.
33
180
46
±30
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q
G
for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
l Class-D Audio Amplifier 300W-500W
(Half-bridge)
PD - 97078A
IRFB4229PbF
2 www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 250 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 38 46
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 1.0 mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 83 ––– ––– S
Q
g
Total Gate Charge ––– 72 110 nC
Q
gd
Gate-to-Drain Charge ––– 26 –––
t
d(on)
Turn-On Delay Time ––– 18 –––
t
r
Rise Time ––– 31 ––– ns
t
d(off)
Turn-Off Delay Time ––– 30 –––
t
f
Fall Time ––– 21 –––
t
st
Shoot Through Blocking Time 100 ––– ––– ns
E
PULSE
Energy per Pulse µJ
C
iss
Input Capacitance ––– 4560 –––
C
oss
Output Capacitance ––– 390 ––– pF
C
rss
Reverse Transfer Capacitance ––– 100 –––
C
oss
eff.
Effective Output Capacitance ––– 290 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
E
AR
Repetitive Avalanche Energy
mJ
V
DS(Avalanche)
Repetitive Avalanche Voltage V
I
AS
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– –––
(Body Diode) A
I
SM
Pulsed Source Current ––– –––
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 190 290 ns
Q
rr
Reverse Recovery Charge ––– 840 1260 nC
––– 790 –––
––– 1390 –––
33
26
–––
–––
300 –––
Typ. Max.
ƒ = 1.0MHz,
––– 130
T
J
= 25°C, I
F
= 26A, V
DD
= 50V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 26A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 26A
V
GS
= 0V, V
DS
= 0V to 200V
V
DS
= 250V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V
L = 220nH, C= 0.3µF, V
GS
= 15V
V
DD
= 125V, V
GS
= 10V
I
D
= 26A
R
G
= 2.4Ω
V
DS
= 200V, R
G
= 4.7Ω, T
J
= 100°C
V
DS
= 25V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 250V, V
GS
= 0V
See Fig. 22
46
180
MOSFET symbol
V
DS
= 25V, I
D
= 26A
V
DD
= 125V, I
D
= 26A, V
GS
= 10V
Conditions
and center of die contact
V
DD
= 200V, V
GS
= 15V, R
G
= 4.7Ω
V
DS
= 200V, R
G
= 4.7Ω, T
J
= 25°C
L = 220nH, C= 0.3µF, V
GS
= 15V
IRFB4229PbF
www.irf.com 3
Fig 6. Typical E
PULSE
vs. Drain Current
Fig 5. Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
5.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 26A
V
GS
= 10V
150 160 170 180 190 200
V
DS,
Drain-to -Source Voltage (V)
0
400
800
1200
1600
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C = 0.3µF
100°C
25°C
100 110 120 130 140 150 160 170
I
D,
Peak Drain Current (A)
0
200
400
600
800
1000
1200
1400
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C = Variable
100°C
25°C
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
5.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
P1-P3P4-P6P7-P8

IRFB4229PBF

Mfr. #:
Buy IRFB4229PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 250V 46A 46mOhm 72nC Qg
Lifecycle:
New from this manufacturer.
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