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DMN3135LVT-7

P1-P3P4-P6
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN3135L
V
T
ADVANCE INFORMATION
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25°C
30V
60mΩ @ V
GS
= 10V
3.5A
100mΩ @ V
GS
= 4.5V
2.8A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3135LVT-7 TSOT26 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TSOT26
Top View
Top View
31D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
G1
D1
G2
D2
S2
S1
6
4
5
1
3
2
Equivalent Circuit
31D
YM
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN3135L
V
T
ADVANCE INFORMATION
Maximum Ratings @ T
A
= 25°C unless otherwise stated
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
3.5
2.7
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
4.3
3.3
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.8
2.1
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
3.4
2.6
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
25 A
Maximum Body Diode Forward Current (Note 5)
I
S
1.5 A
Thermal Characteristics @ T
A
= 25°C unless otherwise stated
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.84 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
155
°C/W
t<10s 109
Total Power Dissipation (Note 6)
P
D
1.27 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
102
°C/W
t<10s 72
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
34
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
- - 1.0 µA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
1.3 1.8 2.2 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
-
35
54
60
100
m
V
GS
= 10V, I
D
= 3.1A
V
GS
= 4.5V, I
D
= 2A
Forward Transfer Admittance
|Y
fs
|
- 4 - S
V
DS
= 5V, I
D
= 3.1A
Diode Forward Voltage
V
SD
- 0.8 1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 305 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 40 -
Reverse Transfer Capacitance
C
rss
- 40 -
Gate Resistance
R
g
- 1.4 -
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
- 4.1 -
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 3.1A
Total Gate Charge
Q
g
- 9.0 -
V
DS
= 15V, V
GS
= 10V, I
D
= 3.1A
Gate-Source Charge
Q
g
s
- 1.2 -
Gate-Drain Charge
Q
g
d
- 1.5 -
Turn-On Delay Time
t
D
(
on
)
- 2.6 -
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3, R
L
= 4.7
Turn-On Rise Time
t
- 4.6 -
Turn-Off Delay Time
t
D
(
off
)
- 13.1 -
Turn-Off Fall Time
t
f
- 2.5 -
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
3 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN3135L
V
T
ADVANCE INFORMATION
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
2.0
4.0
6.0
8.0
10.0
00.511.522.533.544.55
V =10V
GS
V =4.5V
GS
V =4.0V
GS
V =3.5V
GS
V =3.0V
GS
V =2.5V
GS
V , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
2
4
6
8
10
012 345
T = 150 C
A
°
T = 125 C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = 5.0V
DS
I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
Ω
0.01
0.1
1
048121620
I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
Ω
0
0.04
0.08
0.12
0.16
0246810
V = 4.5V
GS
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125 C
A
°
T = 150 C
A
°
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 5 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE
(Normalized)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.10
V =10V
I=10A
GS
D
V=4.5V
I=5A
GS
D
P1-P3P4-P6

DMN3135LVT-7

Mfr. #:
Buy DMN3135LVT-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K
Lifecycle:
New from this manufacturer.
Delivery:
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