SQS401ENW-T1_GE3

SQS401ENW
www.vishay.com
Vishay Siliconix
S15-1309-Rev. A, 09-Jun-15
1
Document Number: 67977
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
Marking Code: Q023
FEATURES
TrenchFET
®
power MOSFET
AEC-Q101 qualified
d
100 % R
g
and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) -40
R
DS(on)
(Ω) at V
GS
= -10 V 0.029
R
DS(on)
(Ω) at V
GS
= -4.5 V 0.047
I
D
(A) -16
Configuration Single
Package PowerPAK 1212-8W
PowerPAK
®
1212-8W Single
Top View
1
3.3 mm
3.3 mm
3.3 mm
3
mm
Bottom View
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
1
S
2
S
3
S
7
D
6
D
5
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
-16
A
T
C
= 125 °C -16
Continuous Source Current (Diode Conduction)
a
I
S
-16
Pulsed Drain Current
b
I
DM
-64
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-26
Single Pulse Avalanche Energy E
AS
33.8 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
62.5
W
T
C
= 125 °C 20
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
81
°C/W
Junction-to-Case (Drain) R
thJC
2.4
SQS401ENW
www.vishay.com
Vishay Siliconix
S15-1309-Rev. A, 09-Jun-15
2
Document Number: 67977
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= -250 μA -40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
5 V -20 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -12 A - 0.020 0.029
Ω
V
GS
= -10 V I
D
= -12 A, T
J
= 125 °C - 0.030 0.043
V
GS
= -10 V I
D
= -12 A, T
J
= 175 °C - 0.040 0.051
V
GS
= -4.5 V I
D
= -9 A - 0.035 0.047
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -7 A - 12 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -20 V, f = 1 MHz
- 1565 1875
pF Output Capacitance C
oss
- 245 295
Reverse Transfer Capacitance C
rss
- 170 205
Total Gate Charge
c
Q
g
V
GS
= -4.5 V V
DS
= -20 V, I
D
= -9.3 A
- 17.7 21.2
nC Gate-Source Charge
c
Q
gs
-5.66.6
Gate-Drain Charge
c
Q
gd
-8.19.7
Gate Resistance R
g
f = 1 MHz 1.1 1.95 2.8 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= -20 V, R
L
= 14.2 Ω
I
D
-1.4 A, V
GEN
= -10 V, R
g
= 1 Ω
-1114
ns
Rise Time
c
t
r
-1013
Turn-Off Delay Time
c
t
d(off)
-36.544
Fall Time
c
t
f
-10.213
Source-Drain Diode Ratings and Characteristic
b
Pulsed Current
a
I
SM
---64A
Forward Voltage V
SD
I
F
= -8.8 A, V
GS
= 0 V - -0.8 -1.1 V
SQS401ENW
www.vishay.com
Vishay Siliconix
S15-1309-Rev. A, 09-Jun-15
3
Document Number: 67977
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0123456
V
GS
=10Vthru5V
V
GS
=3V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
6
12
18
24
30
048121620
T
C
= 125 °C
T
C
= -55 °C
T
C
= 25 °C
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
C
rss
0
500
1000
1500
2000
2500
0 10203040
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
6
12
18
24
30
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= -55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
1
4
3
5
6
0255101520
Q
g
- Total Gate Charge (nC)
- Gate-to-Source Voltage (V)V
GS
V
DS
= 20 V
I
D
= 9.3 A

SQS401ENW-T1_GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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