KSB1022TU

©2000 Fairchild Semiconductor International Rev. A, February 2000

KSB1022

PNP Silicon Darlington Transisto

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage - 60 V

V

CEO

Collector-Emitter Voltage - 60 V

V

EBO

Emitter-Base Voltage - 5 V

I

C

Collector Current (DC) - 7 A

I

CP

Collector Current (Pulse) - 10 A

I

B

Base Current - 0.7 A

P

C

Collector Dissipation (T

a

=25°C) 2 W

P

C

Collector Dissipation (T

C

=25°C) 30 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= - 50mA, I

B

= 0 - 60 V

I

CBO

Collector Cut-off Current V

CB

= - 60V, I

E

= 0 - 100 µA

I

EBO

Emitter Cut-off Current V

EB

= - 5V, I

C

= 0 - 4 mA

h

FE1

h

FE2

DC Current Gain V

CE

= - 3V, I

C

= - 3A

V

CE

= - 3V, I

C

= - 7A

2000

1000

15000

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= - 3A, I

B

= - 6mA

I

C

= - 7A, I

B

= - 14mA

- 0.95

- 1.3

- 1.5

- 2

V

V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= - 3A, I

B

= - 6mA - 1.55 - 2.5 V

t

ON

Turn ON Time V

CC

= - 45V, I

C

= - 3A

I

B1

= - I

B2

= - 6mA

R

L

= 15Ω

0.8 µs

t

STG

Storage Time 2 µs

t

F

Fall Time 2.5 µs

KSB1022

High Power Switching Applications

• High DC Current Gain

• Low Collector-Emitter Saturation Voltage

• Complement to KSD1417

1

1.Base 2.Collector 3.Emitter

TO-220F

©2000 Fairchild Semiconductor International

KSB1022

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Safe Operating Area Figure 6. Power Derating

-0 -2 -4 -6 -8 -10

-0

-2

-4

-6

-8

-10

I

B

= -2.5mA

I

B

= -2mA

I

B

= -1.5mA

I

B

= -0.5mA

I

B

= -1mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100

100

1k

10k

100k

V

CE

= -3V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

-0.1 -1 -10

-0.1

-1

-10

Ic = 500 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2

-0

-1

-2

-3

-4

-5

-6

-7

-8

-9

-10

V

CE

= -3V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100

-0.01

-0.1

-1

-10

-100

100uS

DC

V

CEO

MAX

100mS

1mS

10ms

I

C

max(pulse)

I

C

max(DC)

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

5

10

15

20

25

30

35

40

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30

±0.10

15.80

±0.20

15.87

±0.20

6.68

±0.20

9.75

±0.30

4.70

±0.20

10.16

±0.20

(1.00x45°)

2.54

±0.20

0.80

±0.10

9.40

±0.20

2.76

±0.20

0.35

±0.10

ø3.18

±0.10

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

0.50

+0.10

–0.05

TO-220F

Package Demensions

©2000 Fairchild Semiconductor International Rev. A, February 2000

KSB1022

Dimensions in Millimeters

KSB1022TU

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TRANS PNP DARL 60V 7A TO-220F

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

KSB1022TU