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MUN5113T3G

P1-P3P4-P6P7-P9P10-P12
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBA144EF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.1
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140 −
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 0.8
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 2.0 mA)
V
i(on)
3.0 1.6 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 32.9 47 61.1
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3
Figure 2. V
CE(sat)
vs. I
C
100
10
1
0.1
010203040
I
C
, COLLECTOR CURRENT (mA)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
0.01
0.001
010
V
in
, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
010203040
50
010203040
1
0
V
R
, REVERSE VOLTAGE (V)
12 3 4 5 6 7 8 9
V
O
= 2 V
I
C
/I
B
=10
T
A
=75°C
T
A
=75°C
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
2
3
4
5
6
7
8
9
10
C
ob
, OUTPUT CAPACITANCE (pF)
V
in
, INPUT VOLTAGE (V)
75°C
25°C
T
A
= −25°C
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
T
A
= −25°C
75°C
25°C
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
25°C
−25°C
h
FE
, CURRENT GAIN
−25°C
25°C
MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NSBA144EF3
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100100.1
10
100
1000
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
1
2
3
4
6
7
2016 2812840
0.1
1
10
100
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.001
5
24
1
1
0.01
P1-P3P4-P6P7-P9P10-P12

MUN5113T3G

Mfr. #:
Buy MUN5113T3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
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