IXYA8N250CHV Datasheet IXYH8N250CHV, IXYA8N250CHV | P1-P3

V

CES

= 2500V

I

C110

= 8A

V

CE(sat)







4.0V

t

fi(typ)

= 86ns

DS100835A(5/17)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 3 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 8A, V

GE

= 15V, Note 1 3.35 4.00 V

T

J

= 150C 4.75 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 2500 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 2500 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 29 A

I

C110

T

C

= 110°C 8 A

I

CM

T

C

= 25°C, 1ms 70 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 15 I

CM

= 32 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 280 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in.

Weight TO-263HV 2.5 g

TO-247HV 6.0 g

High Voltage

XPT

TM

IGBT

Advance Technical Information

Features



High Voltage Packages



High Blocking Voltage



High Peak Current Capability



Low Saturation Voltage

Advantages



Low Gate Drive Requirement



High Power Density

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



Laser Generators



Capacitor Discharge Circuits



AC Switches

IXYA8N250CHV

IXYH8N250CHV

TO-247HV (IXYH)

C (Tab)

G

E

C

G = Gate C = Collector

E = Emitter Tab = Collector

G

E

TO-263HV (IXYA)

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYA8N250CHV

IXYH8N250CHV

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 8A, V

CE

= 10V, Note 1 5.4 9.0 S

R

Gi

Gate Input Resistance 11 

C

ie

s

936 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 57 pF

C

res

14 pF

Q

g(on)

45 nC

Q

ge

I

C

= 8A, V

GE

= 15V, V

CE

= 0.5 • V

CES

6 nC

Q

gc

21 nC

t

d(on)

11 ns

t

ri

5 ns

E

on

2.60 mJ

t

d(off)

180 ns

t

fi

86 ns

E

of

f

1.07 mJ

t

d(on)

12 ns

t

ri

12 ns

E

on

3.70 mJ

t

d(off)

200 ns

t

fi

128 ns

E

off

1.20 mJ

R

thJC

0.53 °C/W

R

thCS

TO-247HV 0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 8A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 15

Note 2

Inductive load, T

J

= 150°C

I

C

= 8A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 15

Note 2

TO-247HV Outline

PINS:

1 - Gate 2 - Emitter

3, 4 - Collector

E

R

A

Q

S

A3

e

D

c

b

A1

L1

D3

D1

D2

E2

E3

3X

2X

4X

3X

A2

b1

0P

E1

0P1

4

31 2

e1

L

TO-263HV Outline

PIN: 1 - Gate

2 - Emitter

3 - Collector

+

H

b

D

E

L1

C2

b2

A1

e2

e1

A

+

C

E1

D1

L4

L3

1

2

3

GAUGE

PLANE

0º - 8º

A2

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

2

4

6

8

10

12

14

16

00.511.522.533.544.555.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

10V

9V

8V

7V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

20

40

60

80

100

120

0 5 10 15 20 25

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

8V

11V

12V

7V

6V

9V

14V

13V

Fig. 3. Output Characteristics @ T

J

= 150

o

C

0

2

4

6

8

10

12

14

16

012345678

V

CE

- Volts

I

C

- Amperes

8V

V

GE

= 15V

13V

11V

10V

9V

5V

6V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 8A

I

C

= 4A

I

C

= 16A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2

3

4

5

6

7

8

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 16A

T

J

= 25

o

C

8A

4A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

44.555.566.577.588.599.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 150

o

C

25

o

C

- 40

o

C

IXYA8N250CHV

IXYH8N250CHV

IXYA8N250CHV

IXYA8N250CHV

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