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IXYH8N250CHV

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA8N250CHV
IXYH8N250CHV
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45 50
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
4
8
12
16
20
24
28
32
36
250 500 750 1000 1250 1500 1750 2000 2250 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 150
o
C
R
G
= 15
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1250V
I
C
= 8A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
f
= 1 MHz
C
ies
C
oes
C
res
© 2017 IXYS CORPORATION, All Rights Reserved.
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
T
J
= 150
o
C , V
GE
= 15V
V
CE
= 1250V
I
C
= 8A
I
C
= 16A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 8A
I
C
= 16A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
8 9 10 11 12 13 14 15 16
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
R
G
= 15
Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
R
G
= 15
Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 8A
I
C
= 16A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
60
80
100
120
140
160
180
8 9 10 11 12 13 14 15 16
I
C
- Amperes
t
f i
- Nanoseconds
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 15
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 15
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 16A
I
C
= 8A
I
C
= 16A
IXYA8N250CHV
IXYH8N250CHV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA8N250CHV
IXYH8N250CHV
IXYS REF: IXY_8N250C(3T-P628) 1-31-17
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
5
10
15
20
25
30
8 9 10 11 12 13 14 15 16
I
C
- Amperes
t
r i
- Nanoseconds
8
10
12
14
16
18
20
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 15
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
6
8
10
12
14
16
18
20
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 15
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 16A
I
C
= 8A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
10
20
30
40
50
60
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 1250V
I
C
= 8A
I
C
= 16A
P1-P3P4-P6

IXYH8N250CHV

Mfr. #:
Buy IXYH8N250CHV
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
Lifecycle:
New from this manufacturer.
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