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MRFE6S9200HSR5

P1-P3P4-P6P7-P9P10-P11
MRFE6S9200HR3 MRFE6S9200HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
• Typical Single -Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,
64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
out
= 300 W CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced
Ruggedness.
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +66 Vdc
Gate- Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
R
θ
JC
0.29
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9200H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W- CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRFE6S9200HSR3
CASE 465B- 03, STYLE 1
NI-880
MRFE6S9200HR3
Freescale Semiconductor, Inc., 2007 -2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 10 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 600 µAdc)
V
GS(th)
1.2 2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.7 3.8 Vdc
Drain-Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.1 Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.41 — pF
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 74.61 — pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 557.27 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W -CDMA, f = 880 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain G
ps
20 21 23 dB
Drain Efficiency η
D
33 35 — %
Output Peak -to- Average Ratio @ 0.01% Probability on CCDF PAR 6 6.36 — dB
Adjacent Channel Power Ratio ACPR — -40 -36.5 dBc
Input Return Loss IRL — -15 -9 dB
Typical Performances (In Freescale Test Fixture, 50 οhm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 865- 900 MHz Bandwidth
Video Bandwidth @ 200 W PEP P
out
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 10 —
MHz
Gain Flatness in 35 MHz Bandwidth @ P
out
= 58 W Avg. G
F
— 0.5 — dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
out
= 200 W CW
Φ — 0.28 — °
Average Group Delay @ P
out
= 200 W CW, f = 880 MHz Delay — 3.72 — ns
Part- to -Part Insertion Phase Variation @ P
out
= 200 W CW,
f = 880 MHz, Six Sigma Window
∆Φ — 15.9 — °
Gain Variation over Temperature (-30°C to +85°C) ∆G — 0.016 — dB/°C
Output Power Variation over Temperature (-30°C to +85°C) ∆P1dB — 0.008 — dBm/°C
1. Part is internally matched on input.
MRFE6S9200HR3 MRFE6S9200HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Z19 0.074″ x 0.669″ x 0.707″ Taper
Z20 0.074″ x 0.524″ x 0.595″ Taper
Z21 0.058″ x 0.474″ x 0.488″ Taper
Z22 0.326″ x 0.491″ Microstrip
Z23 0.708″ x 0.220″ Microstrip
Z24 0.555″ x 0.080″ Microstrip
Z25 0.356″ x 0.080″ Microstrip
PCB Arlon CuClad 250GX-0300 - 55-22,
0.030″, ε
r
= 2.55
Z1 0.351″ x 0.080″ Microstrip
Z2 0.538″ x 0.080″ Microstrip
Z3 0.424″ x 0.080″ Microstrip
Z4 0.052″ x 0.220″ Microstrip
Z5 0.414″ x 0.220″ Microstrip
Z6 0.052″ x 0.491″ Microstrip
Z7 0.140″ x 0.491″ Microstrip
Z8 0.244″ x 0.736″ x 0.980″ Taper
Z9 0.119″ x 0.118″ Microstrip
Z10 0.305″ x 0.980″ Microstrip
Z11, Z12 2.134″ x 0.070″ Microstrip
Z13, Z14 1.885″ x 0.100″ Microstrip
Z15 0.100″ x 1.090″ Microstrip
Z16 0.212″ x 1.090″ Microstrip
Z17 0.083″ x 0.962″ x 1.036″ Taper
Z18 0.074″ x 0.816″ x 0.888″ Taper
Z1
RF
INPUT
C1
C20
Z2 Z3 Z4 Z5 Z6
DUT
Z8
Z15
C8
C9
C10 C21
C6
RF
OUTPUT
Z7
Z16 Z17 Z18 Z19 Z20 Z25
C2
B1
V
BIAS
C4
C22
C23
C32
C28
C34
V
SUPPLY
++
C7
Z9 Z10
R3
R2
Z11
C26C30
R1
Z12
C3
B2
R4
C27C31
C13 C15
C11 C12 C14
C17
C16
C19
C18
Z21 Z22 Z23 Z24
Z13
+
+
C5
C25
C24
C33
C29
+
Z14
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair Rite
C1, C2, C3, C4, C5, C6 47 pF Chip Capacitors ATC100B470JT500XT ATC
C7 2.7 pF Chip Capacitor ATC100B2R7JT500XT ATC
C8, C9, C18, C19 1.3 pF Chip Capacitors ATC100B1R3JT500XT ATC
C10, C11 12 pF Chip Capacitors ATC100B120JT500XT ATC
C12, C13 4.3 pF Chip Capacitors ATC100B4R3JT500XT ATC
C14, C15, C16, C17 3.3 pF Chip Capacitors ATC100B3R3JT500XT ATC
C20 0.6-4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson
C21 0.8-8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson
C22, C23, C24, C25 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C26, C27 10 µF, 35 V Tantalum Chip Capacitors T491C106K035AT Kemet
C28, C29 22 µF, 35 V Tantalum Chip Capacitors T491C226K035AT Kemet
C30, C31, C32, C33 0.1 µF Chip Capacitors CDR33Bx104AKYS Kemet
C34 330 µF, 63 V Electrolytic Capacitor EKMG630ELL331MJ205 United Chemi-Con
R1, R2, R3, R4 10 Ω, 1/4 W Chip Resistors CRCW120610R0FKEA Vishay
P1-P3P4-P6P7-P9P10-P11

MRFE6S9200HSR5

Mfr. #:
Buy MRFE6S9200HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 200W NI880HS
Lifecycle:
New from this manufacturer.
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