Nexperia
PRMD16
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD16 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 29 July 2017 8 / 16
V
CE
(V)
0 -5-4-2 -3-1
aaa-021339
-0.04
-0.06
-0.02
-0.08
-0.1
I
C
(A)
0
I
B
= -0.09 mA
-0.27 mA
-0.36 mA
-0.45 mA
-0.54 mA
-0.63 mA
-0.81 mA
-0.90 mA
-0.18 mA
-0.72 mA
T
amb
= 25 °C
Fig. 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
aaa-021342
I
C
(mA)
-10
-1
-10
2
-10-1
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(3)
(2)
I
C
/I
B
= 10
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 12. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
C
(mA)
-10
-1
-10
2
-10-1
aaa-021340
-10
-1
-10
2
V
I(on)
(V)
-10
-1
(1)
(2)
(3)
V
CE
= -0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 13. PNP transistor: On-state input voltage as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10-1
aaa-021341
-1
-10
V
I(off)
(V)
-10
-1
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 14. PNP transistor: Off-state input voltage as a
function of collector current; typical values
