Features
■ RoHS compliant*
■ Leadless
■ High speed
Switching Chip Diode Series - 0603/1005
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/
EU June 8, 2011.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in differ-
ent applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are RoHS compliant
with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their fl at confi guration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Absolute Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit
Forward Voltage (Max.) V
F
1.00
(I
f
= 100 mA)
1.00
(I
f
= 50 mA)
1.00
(I
f
= 100 mA)
V
Capacitance Between Terminals (Max.) C
T
4
(f = 100 MHz, V
r
= 1 V DC)
pF
Reverse Recovery Time (Max.) t
rr
4
(V
r
= 6 V, I
f
= 10 mA, R
L
= 50 ohms)
nS
Reverse Current (Max.) I
R
0.1
(V
r
= 80 V)
2.5
(V
r
= 75 V)
0.05
(V
r
= 75 V)
µA
Parameter
Symbol
CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit
Repetitive Peak Reverse Voltage V
RRM
90 100 90 V
Reverse Voltage V
R
80 75 80 V
Average Forward Current I
o
100 150 100 mA
Forward Current, Surge Peak I
surge
1** 4*** 1** A
Power Dissipation
CD0603
CD1005
P
D
150
300
mW
Storage Temperature T
STG
-40 to +125 °C
Junction Temperature T
J
-40 to +125 °C
*RoHS COMPLIANT
How to Order
CD 0603 - S 01 80 R
Common Code
Chip Diode
Package
• 0603
• 1005
Model
S = High-Speed Switching
Average Forward Current (I
o
) Code
01 = 100 mA
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (V
R
) Code
80 = 80 V
75 = 75 V
Reverse Current Suffi x
R = Low Leakage I
R
(CDxxxx-S0180R)
** Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
*** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
This series is currently available but
not recommended for new designs.
