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TC7SH08F,LJ(CT

P1-P3P4-P6P7-P8
TC7SH08FU
1
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SH08FU
TC7SH08FU
TC7SH08FU
TC7SH08FU
Start of commercial production
1993-09
1.
1.
1.
1. Functional Description
Functional Description
Functional Description
Functional Description
• 2-Input AND Gate
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperture : T
opr
=-40 to 125 (Note 2)
(3) High speed operation: t
pd
= 4.3 ns (typ.) (V
CC
= 5.0 V, C
L
= 15 pF)
(4) Low power dissipation: I
CC
= 2.0 µA (max) (T
a
= 25 )
(5) High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
(6) 5.5 V tolerant inputs
(7) Wide operating voltage range: V
CC
= 2.0 to 5.5 V
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number TC7SH08FU,LJ(CT. T
opr
= -40 to 85 for the other devices.
3.
3.
3.
3. Packaging
Packaging
Packaging
Packaging
USV
2016-08-01
Rev.2.0
©2016 Toshiba Corporation
TC7SH08FU
2
4.
4.
4.
4. Marking and Pin Assignment
Marking and Pin Assignment
Marking and Pin Assignment
Marking and Pin Assignment
Marking
Marking
Marking
Marking Pin Assignment (Top view)
Pin Assignment (Top view)
Pin Assignment (Top view)
Pin Assignment (Top view)
5.
5.
5.
5. IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
6.
6.
6.
6. Truth Table
Truth Table
Truth Table
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
L
L
L
H
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Supply voltage
Input voltage
DC output voltage
Input diode current
Output diode current
DC output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Note
(Note 1)
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
200
-65 to 150
Unit
V
mA
mW
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V
OUT
< GND, V
OUT
> V
CC
2016-08-01
Rev.2.0
©2016 Toshiba Corporation
TC7SH08FU
3
8.
8.
8.
8. Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Note
(Note 1)
(Note 2)
Test Condition
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
-40 to 85
0 to 100
0 to 20
Unit
V
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 1: For devices with the ordering part number TC7SH08FU,LJ(CT.
Note 2: For devices except those with the ordering part number TC7SH08FU,LJ(CT.
9.
9.
9.
9. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
9.1.
9.1.
9.1.
9.1. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
Test Condition
V
IN
= V
IH
V
IN
= V
IH
or V
IL
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
I
OH
= -50 µA
I
OH
= -4 mA
I
OH
= -8 mA
I
OL
= 50 µA
I
OL
= 4 mA
I
OL
= 8 mA
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to 5.5
5.5
Min
1.5
V
CC
× 0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.5
V
CC
× 0.3
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
Unit
V
V
V
V
µA
µA
2016-08-01
Rev.2.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P8

TC7SH08F,LJ(CT

Mfr. #:
Buy TC7SH08F,LJ(CT
Manufacturer:
Toshiba
Description:
Logic Gates L-MOS AND
Lifecycle:
New from this manufacturer.
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