Nexperia
PRMH2
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
PRMH2 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 27 July 2017 5 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current (emitter open)
V
CB
= 50 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
amb
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current (base open)
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 90 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA; T
amb
= 25 °C 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA; T
amb
= 25 °C - - 150 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA; T
amb
= 25 °C - 1.2 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 2 mA; T
amb
= 25 °C 3 1.6 - V
R1 bias resistor 1 [1] 33 47 61 kΩ
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 0.8 1 1.2
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 2.5 pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 230 - MHz
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor
I
C
(mA)
10
-1
10
2
101
006aac752
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 3. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
aaa-018667
0.04
0.06
0.02
0.08
0.1
I
C
(A)
0
I
B
= 0.06 mA
0.12 mA
0.18 mA
0.24 mA
0.30 mA
0.36 mA
0.60 mA
0.42 mA
0.48 mA
0.54 mA
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
