APT8020JLL

AP8020JLL
050-7079 Rev B 7-2004
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
10 20 30 40 50 60 10 20 30 40 50 60
10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50
t
d(on)
t
d(off)
E
on
E
off
200
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 800 0 10 20 30 40 50
0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
132
100
50
10
1
16
12
8
4
0
20,000
10,000
1,000
100
200
100
10
1
C
rss
C
iss
C
oss
T
J
=+150°C
T
J
=+25°C
V
DS
=400V
V
DS
=160V
V
DS
=640V
I
D
= 33A
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
1mS
100µS
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
E
on
E
off
V
DD
= 533V
I
D
= 38A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7079 Rev B 7-2004
APT8020JLL
Typical Performance Curves
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
®
is a Registered Trademark of SGS Thomson.
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT30DF100
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
10%
0
t
d(off)
90%
90%
t
f
T
J
125°C
T
J
125°C

APT8020JLL

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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