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MJL4281A

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 3
1 Publication Order Number:
MJL4281A/D
MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features
• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain − 80 to 240
h
FE
= 50 (min) @ I
C
= 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A/100 V @ 1 Second
• High f
T
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
350 Vdc
Collector−Base Voltage V
CBO
350 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
350 Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
C
15
30
Adc
Base Current − Continuous I
B
1.5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
230
1.84
W
°C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−  65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.54 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJL4281A TO−264
TO−264
CASE 340G
STYLE 2
25 Units/Rail
2
1
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS
3
MARKING DIAGRAM
xxx = 281 or 302
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
MJL4302A TO−264 25 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
MJL4xxxA
AYYWWG
MJL4302AG TO−264
(Pb−Free)
25 Units/Rail
MJL4281AG TO−264
(Pb−Free)
25 Units/Rail
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(I
C
= 50 mA, I
B
= 0)
V
CE(sus)
350 Vdc
Collector Cut−off Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
100
mAdc
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
I
CBO
− 50
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− 5.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1.0 s (non−repetitive)
I
S/b
4.5
1.0
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
h
FE
80
80
80
80
50
10
250
250
250
250
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
V
CE(sat)
− 1.0
Vdc
Emitter−Base Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
V
BE(sat)
− 1.4
Vdc
Base−Emitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
f
T
35 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 MHz)
C
ob
− 600
pF
MJL4281A (NPN) MJL4302A (PNP)
http://onsemi.com
3
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
T
J
= 100°C
T
J
= 25°C
Figure 1. DC Current Gain, V
CE
= 5 V,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 2. DC Current Gain, V
CE
= 5 V,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100°C
T
J
= 25°C
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 3. DC Current Gain, V
CE
= 20 V,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100°C
T
J
= 25°C
10
100
1000
0.01 0.1 1 10 100
hFE, DC CURRENT GAIN
Figure 4. DC Current Gain, V
CE
= 20 V,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
T
J
= 100°C
T
J
= 25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01 0.1 1 10 100
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
I
C
, COLLECTOR CURRENT (A)
SATURATION VOLTAGE (V)
T
J
= 25°C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01 0.1 1 10 100
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
I
C
, COLLECTOR CURRENT (A)
SATURATION VOLTAGE (V)
T
J
= 25°C
I
c
/I
b
= 10
V
be(sat)
V
ce(sat)
TYPICAL CHARACTERISTICS
P1-P3P4-P5

MJL4281A

Mfr. #:
Buy MJL4281A
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 350V 15A TO264
Lifecycle:
New from this manufacturer.
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