KSC3233DTF

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC3233

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 500 V

V

CEO

Collector-Emitter Voltage 400 V

V

EBO

Emitter-Base Voltage 7 V

I

C

Collector Current 2 A

I

B

Base Current 0.5 A

P

C

Collector Dissipation (T

C

=25°C) 20 W

P

C

Collector Dissipation (T

a

=25°C) 1 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

BV

CEO

Collector-Base Breakdown Voltage I

C

= 1mA, I

E

= 0 500 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 10mA, I

B

= 0 400 V

I

CBO

Collector Cut-off Current V

CB

= 400V, I

E

= 0 100 µA

I

EBO

Emitter Cut-off Current V

EB

= 7V, I

C

= 0 1 mA

h

FE1

h

FE2

DC Current Gain V

CE

= 5V, I

C

= 0.1A

V

CE

= 5V, I

C

= 1A

20

8

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 1A, I

B

= 0.2A 1 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 1A, I

B

= 0.2A 1.5 V

t

ON

Turn ON Time V

CC

= 200V, I

C

= 0.8A

1

B1

= -I

B2

= 0.08A

R

L

= 250Ω

1 µs

t

STG

Storage Time 2.5 µs

t

F

Fall Time 1 µs

KSC3233

High Speed Switching

• Low Collector-Emitter Saturation Voltage

• High speed Switching : t

F

=1µs (Max.) @ I

C

=0.8A

• Collector-Emitter Voltage : V

CEO

=400V

• Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix)

1. Base 2. Collector 3. Emitter

I-PAK

1

©2001 Fairchild Semiconductor Corporation

KSC3233

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter on Voltage

Figure 5. Safe Operating Area Figure 6. Power Derating

0246810

0.0

0.4

0.8

1.2

1.6

2.0

I

B

= 80mA

I

B

= 120mA

I

B

= 180mA

I

B

= 60mA

I

B

= 40mA

I

B

= 20mA

I

B

= 10mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

1E-3 0.01 0.1 1 10

0.1

1

10

100

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

1E-3 0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 5 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.00.20.40.60.81.01.2

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V

CE

= 5V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

1 10 100 1000

0.01

0.1

1

10

10us

100us

100ms

500us

10ms

1ms

3ms

DC

I

C

MAX. (Pulse)

I

C

MAX. (DC)

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

4

8

12

16

20

24

28

32

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSC3233

Dimensions in Millimeters

6.60

±0.20

0.76

±0.10

MAX0.96

2.30TYP

[2.30±0.20]

2.30TYP

[2.30±0.20]

0.60

±0.20

0.80

±0.10

1.80

±0.20

9.30

±0.30

16.10

±0.30

6.10

±0.20

0.70

±0.20

5.34

±0.20

0.50

±0.10

0.50

±0.10

2.30

±0.20

(0.50) (0.50)(4.34)

I-PAK

KSC3233DTF

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT Triple Diffused Planar Sil

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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Products related to this Datasheet

KSC3233DTF