APTGT100A60T1G
APTGT100A60T1G – Rev 1 October, 2012
www.microsemi.com
1
6
9
Q2
Q1
10
12
21
7
8
11
3
4
CR1
CR2
56
NTC
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C
150 *
I
C
Continuous Collector Current
T
C
= 80°C
100 *
I
CM
Pulsed Collector Current T
C
= 25°C 200
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
340 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 200A @ 550V
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT3
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Trench + Field Stop IGBT3
Power Module
V
CES
= 600V
I
C
= 100A* @ Tc = 80°C