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BS107G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 7
1 Publication Order Number:
BS107/D
BS107A
Small Signal MOSFET
250 mA, 200 V, N−Channel TO−92
Features
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
200 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 ms)
V
GS
V
GSM
± 20
± 30
Vdc
Vpk
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
I
D
I
DM
250
500
mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
D (1)
G (2)
N−Channel
S (3)
250 mAMPS, 200 VOLTS
R
DS(on)
= 6.4 W
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 30
A
BS107A
YWW G
G
BS107ARL1G TO−92
(Pb−Free)
2000 / Tape & Reel
1
2
3
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
BS107A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
DS
= 130 Vdc, V
GS
= 0) I
DSS
− − 30 nAdc
Drain−Source Breakdown Voltage (V
GS
= 0, I
D
= 100 mAdc)
V
(BR)DSX
200 − − Vdc
Gate Reverse Current (V
GS
= 15 Vdc, V
DS
= 0) I
GSS
− 0.01 10 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (I
D
= 1.0 mAdc, V
DS
= V
GS
) V
GS(Th)
1.0 − 3.0 Vdc
Static Drain−Source On Resistance
BS107 (V
GS
= 2.6 Vdc, I
D
= 20 mAdc)
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
BS107A (V
GS
= 10 Vdc)
(I
D
= 100 mAdc)
(I
D
= 250 mAdc)
r
DS(on)
−
−
−
−
−
−
4.5
4.8
28
14
6.0
6.4
W
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
− 60 − pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
− 6.0 − pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
− 30 − pF
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 250 mAdc)
g
fs
200 400 − mmhos
SWITCHING CHARACTERISTICS
Turn−On Time t
on
− 6.0 15 ns
Turn−Off Time t
off
− 12 15 ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
20 dB
50 W ATTENUAT
OR
PULSE GENERATOR
+25 V
V
in
40 pF
1 M
50
23
50
V
out
TO SAMPLING SCOPE
50 W INPUT
INPUT V
in
10%
90%
50%
50%
10%
90%
90%
OUTPUT V
out
INVERTED
t
on
t
off
PULSE WIDTH
10 V
BS107A
http://onsemi.com
3
V
GS
= 10 V
250 mA
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.2
0.1
, DRAIN-SOURCE VOLTAGE (VOLTS)
-55 -15 25 65
105
0
0.3
0.2
0.1
0.4
0.6
0.5
, DRAIN CURRENT (AMPS)
D(on)
I
0 1.0 2.0 3.0 4.0
5.0
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
0.8
0.7
0.3
0.2
0.1
0.4
0.6
0.5
0.7
6.0 7.0 8.0
9.0 10
0 2.0 4.0 6.0 8.0
10
12 14 16
18 20
C, CAPACITANCE (pF)
145
-35 +5.0 45
85 125
T
J
, JUNCTION TEMPERATURE (°C)
0102030
40 50
0
60
40
20
80
120
100
160
140
200
180
V
DS
100 mA
V
GS
= 0 V
C
iss
C
oss
C
rss
Figure 3. On Voltage versus Temperature Figure 4. Capacitance Variation
Figure 5. Transfer Characteristic Figure 6. Output Characteristic
V
GS
= 10 V
10 V
5.0 V
4.0 V
3.0 V
, DRAIN CURRENT (AMPS)
D(on)
I
10 V
5.0 V
4.0 V
3.0 V
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (AMPS)
D(on)
I
0.3
0.2
0.1
0.4
0.6
0.5
0.7
1.0 2.0 3.0 4.0
5.0
Figure 7. Saturation Characteristic
P1-P3P4-P4

BS107G

Mfr. #:
Buy BS107G
Manufacturer:
ON Semiconductor
Description:
MOSFET 200V 250mA N-Channel
Lifecycle:
New from this manufacturer.
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