IXTT16N50D2 Datasheet IXTH16N50D2, IXTT16N50D2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSX

T

J

= 25C to 150C 500 V

V

DGX

T

J

= 25C to 150C, R

GS

= 1M 500 V

V

GSX

Continuous 20 V

V

GSM

Transient 30 V

P

D

T

C

= 25C 695 W

T

J

- 55 ... +150 C

T

JM

150 C

T

stg

- 55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

DS100261C(4/17)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSX

V

GS

= - 5V, I

D

= 250A 500 V

V

GS(off)

V

DS

= 25V, I

D

= 4mA - 2.0 - 4.0 V

I

GSX

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSX(off)

V

DS

= V

DSX

, V

GS

= - 5V 10 A

T

J

= 125C 150A

R

DS(on)

V

GS

= 0V, I

D

= 8A, Note 1 300 m

I

D(on)

V

GS

= 0V, V

DS

= 25V, Note 1 16 A

Depletion Mode

MOSFET

N-Channel

IXTH16N50D2

IXTT16N50D2

V

DSX

= 500V

I

D(on)

> 16A

R

DS(on)



 300m





Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL 94 V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

TO-268 (IXTT)

G

S

D (Tab)

S

G

D (Tab)

D

G

D

S

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH16N50D2

IXTT16N50D2

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 30V, I

D

= 8A, Note 1 7 12 S

C

iss

5250 pF

C

oss

V

GS

= -10V, V

DS

= 25V, f = 1MHz 515 pF

C

rss

130 pF

t

d(on)

50 ns

t

r

173 ns

t

d(off)

203 ns

t

f

220 ns

Q

g(on)

199 nC

Q

gs

V

GS

= + 5V, V

DS

= 250V, I

D

= 8A 18 nC

Q

gd

100 nC

R

thJC

0.18C/W

R

thCS

TO-247 0.21 C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA V

DS

= 500V, I

D

= 0.5A, T

C

= 75C, tp = 5s 250 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

V

SD

I

F

= 16A, V

GS

= -10V, Note 1 0.8 1.3 V

t

rr

695 ns

I

RM

20 A

Q

RM

7 μC

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

= + 5V, V

DS

= 250V, I

D

= 8A

R

G

= 3.3 (External)

I

F

= 8A, -di/dt = 100A/s

V

R

= 100V, V

GS

= -10V

e

P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXTH16N50D2

IXTT16N50D2

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

2

4

6

8

10

12

14

16

0.00.51.01.52.02.53.03.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

2V

1V

-1.5V

-1.0V

- 2.0V

- 2.5V

- 0.5V

- 0V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

10

20

30

40

50

60

70

80

0 5 10 15 20 25 30 35

V

DS

- Volts

I

D

- Amperes

- 2V

- 0.5V

-1V

0V

V

GS

= 5V

3V

1V

1.5V

0.5V

2V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

2

4

6

8

10

12

14

16

01234567

V

DS

- Volts

I

D

- Amperes

-1.0V

- 2.0V

- 2.5V

- 3.0V

V

GS

= 5.0V

1.0V

0.5V

0V

-1.5V

- 0.5V

Fig. 6. Dynamic Resistance vs. Gate Voltage

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

-5 -4 -3 -2 -1 0

V

GS

- Volts

R

O

- Ohms

T

J

= 25

o

C

T

J

= 100

o

C

∆

V

DS

= 50V - 25V

Fig. 4. Drain Current @ T

J

= 25

o

C

0

4

8

12

16

20

24

28

32

0 1020304050

V

DS

- Volts

I

D

- Amperes

V

GS

= 0V

- 0.4V

- 0.8V

- 1.2V

- 1.6V

- 2.0V

- 2.4V

Fig. 5. Drain Current @ T

J

= 100

o

C

0

4

8

12

16

20

24

28

32

0 1020304050

V

DS

- Volts

I

D

- Amperes

V

GS

= 0V

- 0.4V

- 0.8V

- 1.2V

- 1.6V

- 2.0V

- 2.4V

IXTT16N50D2

IXTT16N50D2

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