ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25°C)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
EMITTER
I
F
= 40 mA V
F
— — 1.7 V
Forward Voltage
Reverse Current V
R
= 2.0 V I
R
— — 100 µA
Peak Emission Wavelength I
F
= 20 mA
!
PE
— 940 — nm
SENSOR
I
C
= 1 mA BV
CEO
30 — — V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage I
E
= 0.1 mA BV
ECO
5——V
Collector-Emitter Dark Current V
CE
= 10 V, I
F
= 0 mA I
CEO
— — 100 nA
COUPLED
On-state Collector Current
I
F
=40mA,V
CE
=5V,D =.150”
(5,6)
I
C(ON)
0.20 — — mA
Collector-Emitter I
F
= 40 mA, I
C
= 0.1 mA
V
CE (SAT)
— — 0.4 V
Saturation Voltage D = 1.50”
(5,7)
Rise Time V
CE
= 5 V, R
L
= 100 " t
r
—8—
µs
Fall Time I
C(ON)
= 5 mA t
f
—8—
Crosstalk I
F
= 40 mA, V
CE
= 5 V
(7)
I
CX
— — 1.00 µA
www.fairchildsemi.com 2 OF 4 11/06/01 DS300353
Parameter Symbol Rating Units
Operating Temperature T
OPR
-40 to +85
°C
Storage Temperature T
STG
-40 to +85
°C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
SENSOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
5V
Collector Current I
C
20 mA
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
7. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRC1133
