VND810PEP-E Electrical specifications
Doc ID 10858 Rev 6 7/24
2.2 Thermal data
2.3 Electrical characteristics
Values specified in this section are for 8V < V
CC
< 36V; -40°C < T
j
< 150°C, unless
otherwise stated.
Figure 3. Current and voltage conventions
Note: V
Fn
= V
CCn
- V
OUTn
during reverse battery condition.
Table 4. Thermal data (per island)
Symbol Parameter Maximum value Unit
R
thj-case
Thermal resistance junction-case 2.3 °C/W
R
thj-amb
Thermal resistance junction-ambient
(one chip ON)
61
(1)
1. When mounted on a standard single-sided FR-4 board with 1cm
2
of Cu (at least 35 µm thick) connected to
all V
CC
pins.
50
(2)
2. When mounted on a standard single-sided FR-4 board with 8cm
2
of Cu (at least 35 µm thick) connected to
all V
CC
pins.
°C/W
I
S
I
GND
V
CC
GND
V
CC
OUTPUTn
I
OUTn
V
OUTn
INPUTn
I
INn
STATUSn
I
STATn
V
INn
V
STATn
V
F1
(*)
Electrical specifications VND810PEP-E
8/24 Doc ID 10858 Rev 6
Note: To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 5. Power outputs
Symbol Parameter Test conditions Min Typ Max Unit
V
CC
Operating supply
voltage
5.5 13 36 V
V
USD
Undervoltage shutdown 3 4 5.5 V
V
OV
Overvoltage shutdown 36 V
R
ON
On-state resistance
I
OUT
= 1A; T
j
= 25°C
I
OUT
= 1A; V
CC
> 8V
160
320
mΩ
mΩ
I
S
Supply current
Off-state; V
CC
= 13V;
V
IN
= V
OUT
= 0V
Off-state; V
CC
= 13V;
V
IN
= V
OUT
= 0V;
T
j
= 25°C
On-state; V
CC
= 13V; V
IN
= 5V;
I
OUT
= 0A
12
12
5
40
25
7
µA
µA
mA
I
L(off1)
Off-state output current V
IN
= V
OUT
= 0V 0 50 µA
I
L(off2)
Off-state output current V
IN
= 0V; V
OUT
= 3.5V -75 0 µA
I
L(off3)
Off-state output current
V
IN
= V
OUT
= 0V; V
CC
= 13V;
T
j
= 125°C
A
I
L(off4)
Off-state output current
V
IN
= V
OUT
= 0V; V
CC
= 13V;
T
j
= 25°C
A
Table 6. Protections and diagnostics
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown temperature 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
t
SDL
Status delay in overload
conditions
T
j
> T
TSD
20 µs
I
lim
Current limitation
V
CC
= 13V
5.5V < V
CC
< 36V
3.557.5
7.5
A
A
V
demag
Turn-off output clamp
voltage
I
OUT
= 1A; L = 6mH
V
CC
-
41
V
CC
-
48
V
CC
-
55
V
VND810PEP-E Electrical specifications
Doc ID 10858 Rev 6 9/24
Table 7. V
CC
- output diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on voltage - I
OUT
= 0.5A; T
j
= 150°C 0.6 V
Table 8. Switching (V
CC
= 13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
R
L
= 13Ω from V
IN
rising edge
to V
OUT
= 1.3V (see Figure 5)
30 µs
t
d(off)
Turn-off delay time
R
L
= 13Ω from V
IN
falling edge
to V
OUT
= 11.7V
(see Figure 5)
30 µs
dV
OUT
/dt
(on)
Turn-on voltage slope
R
L
= 13Ω from V
OUT
= 1.3V to
V
OUT
= 10.4V (see Figure 5)
V/µs
dV
OUT
/dt
(off)
Turn-off voltage slope
R
L
= 13Ω from V
OUT
= 11.7V
to V
OUT
= 1.3V (see Figure 5)
V/µs
Table 9. Logic inputs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level 1.25 V
I
IL
Low level input current V
IN
= 1.25V 1 µA
V
IH
Input high level 3.25 V
I
IH
High level input current V
IN
= 3.25V 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 V
V
ICL
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
66.8
- 0.7
8V
V
Table 10. Protections and diagnostics
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown temperature 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
t
SDL
Status delay in overload
conditions
T
j
> T
TSD
20 µs
I
lim
Current limitation
V
CC
= 13V
5.5V < V
CC
< 36V
3.557.5
7.5
A
A
V
demag
Turn-off output clamp
voltage
I
OUT
= 1A; L = 6mH
V
CC
-
41
V
CC
-
48
V
CC
-
55
V

VND810PEPTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers DOUBLE Ch Hi SIDE DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
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