NXP Semiconductors
PMEG4010CPAS
40 V, 1 A low VF dual MEGA Schottky barrier rectifier
PMEG4010CPAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 October 2015 7 / 15
V
R
(V)
0 403010 20
006aac432
100
150
50
200
250
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
I
F(AV)
(A)
0.0 1.51.00.5
006aac433
0.2
0.4
0.6
P
F(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 403010 20
006aac434
0.1
0.2
0.3
P
R(AV)
(V)
0.0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aac435
0.5
1.0
1.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
