SI1012X-T1-GE3 Datasheet SI1012R-T1-GE3, SI1012X-T1-GE3, SI1012X-T1-E3 | P1-P3

Vishay Siliconix

Si1012R, Si1012X

Document Number: 71166

S13-0786-Rev. E, 15-Apr-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 1.8 V (G-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET: 1.8 V Rated

• Gate-Source ESD Protected: 2000 V

• High-Side Switching

• Low On-Resistance: 0.7 

• Low Threshold: 0.8 V (typ.)

• Fast Switching Speed: 10 ns

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(mA)

20

0.70 at V

GS

= 4.5 V

600

0.85 at V

GS

= 2.5 V

500

1.25 at V

GS

= 1.8 V

350

Top View

2

1

S

D

G

3

SC-75A or SC-89

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface mounted on FR4 board.

ORDERING INFORMATION

Part Number Package

Marking

Code

Si1012R-T1-GE3 (Lead (Pb)-free

and Halogen-free)

SC-75A

(SOT-416)

C

Si1012X-T1-GE3 (Lead (Pb)-free

and Halogen-free)

SC-89

(SOT-490)

A

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

20

V

Gate-Source Voltage

V

GS

± 6

Continuous Drain Current (T

J

= 150 °C)

b

T

A

= 25 °C

I

D

600 500

mA

T

A

= 85 °C

400 350

Pulsed Drain Current

a

I

DM

1000

Continuous Source Current (Diode Conduction)

b

I

S

275 250

Maximum Power Dissipation

b

for SC-75

T

A

= 25 °C

P

D

175 150

mW

T

A

= 85 °C

90 80

Maximum Power Dissipation

b

for SC-89

T

A

= 25 °C

275 250

T

A

= 85 °C

160 140

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

Vishay Siliconix

Si1012R, Si1012X

www.vishay.com

2

Document Number: 71166

S13-0786-Rev. E, 15-Apr-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.45 0.9 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V

± 0.5 ± 1 µA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

0.3 100

nA

V

DS

= 20 V, V

GS

= 0 V, T

J

= 85 °C

5µA

On-State Drain Current

a

I

D(on)

V

DS

= 5 V, V

GS

= 4.5 V

700 mA

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 600 mA

0.41 0.70



V

GS

= 2.5 V, I

D

= 500 mA

0.53 0.85

V

GS

= 1.8 V, I

D

= 350 mA

0.70 1.25

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 400 mA

1 S

Diode Forward Voltage

a

V

SD

I

S

= 150 mA, V

GS

= 0 V

0.8 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 250 mA

750

pCGate-Source Charge

Q

gs

75

Gate-Drain Charge

Q

gd

225

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 10 V, R

L

= 47 

I

D

 200 mA, V

GEN

= 4.5 V, R

g

= 10 

5

ns

Rise Time

t

r

5

Turn-Off Delay Time

t

d(off)

25

Fall Time

t

f

11

Vishay Siliconix

Si1012R, Si1012X

Document Number: 71166

S13-0786-Rev. E, 15-Apr-13

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

= 5 V thru 1.8 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1 V

- On-Resistance (Ω)

R

DS(on)

0.0

0.8

1.6

2.4

3.2

4.0

0 200 400 600 800 1000

I

D

- Drain Current (mA)

V

GS

= 1.8 V

V

GS

= 4.5 V

V

GS

= 2.5 V

0

1

2

3

4

5

0.0 0.2 0.4 0.6 0.8

V

DS

= 10 V

I

D

= 250 mA

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

200

400

600

800

1000

1200

0.0 0.5 1.0 1.5 2.0 2.5

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (mA)

T

C

= - 55 °C

0

20

40

60

80

100

048 12 16 20

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C -

Capacitance (pF)

R

DS(on)

- On-Resistance

(Normalized)

0.60

0.80

1.00

1.20

1.40

1.60

- 50 - 25 0 25 50 75 100 125

V

GS

= 4.5 V

I

D

= 600 mA

T

J

- J unction Temperature (°C)

V

GS

= 1.8 V

I

D

= 350 mA

SI1012X-T1-GE3

SI1012X-T1-GE3

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