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VS-GB200TH120N

P1-P3P4-P6P7-P7
VS-GB200TH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
4
Document Number: 94763
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I
C
(A)
V
CE
(V)
0 300 900600 1200 1500
0
200
250
300
350
400
450
100
50
150
R
g
= 5.1 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Z
thJC
- Thermal Impedance (K/W)
IGBT
V
F
(V)
I
F
(A)
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3
125 °C
25 °C
0
5
10
15
20
25
0 80 240160 320 400
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 5.1 Ω
V
GE
= - 15 V
T
J
= 125 °C
VS-GB200TH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
5
Document Number: 94763
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E (mJ)
R
g
(Ω)
01020 4030 50
0
20
10
5
15
25
E
rec
V
CC
= 600 V
I
C
= 200 A
V
GE
= - 15 V
T
J
= 125 °C
0.001
0.01
0.1
1
0.001 0.01 0.1 1
10
t (s)
Z
thJC
(K/W)
Diode
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95525
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
1
Document Number: 95525
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
Mounting depth max. 11
3-M6
16
2.8 x 0.5
31 ± 0.5
30.5 ± 0.5
7.2 ± 0.6
61.4
30
48 ± 0.4
35.4
15 ± 0.4
27 ± 0.4
23 ± 0.3
26
6
28 ± 0.3
93 ± 0.4
106.4
6226
Ø 6.4 ± 0.2
28 ± 0.3 20.1
123
P1-P3P4-P6P7-P7

VS-GB200TH120N

Mfr. #:
Buy VS-GB200TH120N
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules Output & SW Modules - DIAP IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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