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IRFIZ24EPBF

P1-P3P4-P6P7-P9
IRFIZ24EPbF
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFIZ24EPbF
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
TO-220 Full-Pak Part Marking Information
WITH ASSEMBLY
EXAMPLE: THIS IS AN IRFI840G
LOT CODE 3432
ASSEMBLED ON WW 24 1999
IN THE ASSEMBLY LINE "K"
PART NUMBER
LOT CODE
ASSEMBLY
INT ERNATIONAL
RECTIFIER
LOGO
34 32
924K
IRFI840G
DATE CODE
YEAR 9 = 1999
WEEK 24
LINE K
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
P1-P3P4-P6P7-P9

IRFIZ24EPBF

Mfr. #:
Buy IRFIZ24EPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 14A TO220FP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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