NX5P3001 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 11 September 2013 7 of 20
NXP Semiconductors
NX5P3001
Bidirectional power switch for charger and USB-OTG combinations
[1] VBUSx is the supply voltage associated with the input, either VBUSI or VBUSO.
[2] All typical values are measured at V
I(VBUSx)
= 5.0 V unless otherwise specified.
[3] Typical value is measured at V
I(VBUSO)
= 0 V.
[4] Typical value is measured at V
I(VBUSI)
= 0 V.
I
GND
ground current EN = LOW; I
O
= 0 A;
see Figure 6 to Figure 11
- 280 - - 400 A
EN
= HIGH; I
O
= 0 A;
see Figure 6 to Figure 11
816A
I
S(OFF)
OFF-state
leakage current
V
I(VBUSI)
= 5.5 V;
V
I(VBUSO)
= 0 V to 5 V;
see Figure 12
[3]
-0.1 - - 6.5A
V
I(VBUSO)
= 5.5 V;
V
I(VBUSI)
= 0 V to 30 V;
see Figure 13
[4]
-0.1 - - 8.5A
V
UVLO
undervoltage
lockout voltage
VBUSI; VBUSO; EN = LOW 3.0 3.2 3.4 3.0 3.4 V
V
hys(UVLO)
undervoltage
lockout hysteresis
voltage
VBUSI; VBUSO; EN = LOW - 100 - - - mV
V
OVLO
overvoltage
lockout voltage
VBUSI; EN = LOW 6.1 6.35 6.8 6.1 6.8 V
V
hys(OVLO)
overvoltage
lockout hysteresis
voltage
VBUSI; EN = LOW - 100 - - - mV
C
I/O
input/output
capacitance
D-; D+; ID; V
I(VBUSx)
= 5.5 V
[1]
-3 - - -pF
C
I
input capacitance EN -3 - - -pF
C
S(ON)
ON-state
capacitance
VBUSI; VBUSO - - 0.5 - 0.5 nF
Table 8. Static characteristics …continued
V
I(VBUSx)
= 4.0 V to 5.5 V
[1]
; unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +85 C Unit
Min Typ
[2]
Max Min Max
